|
SPP4953 PDF даташит
| Спецификация SPP4953 изготовлена «SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET». |
|
|
Детали детали
| Номер произв | SPP4953 |
| Описание | P-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
No Preview Available ! |
SPP4953
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP4953 is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-30V/-5.0A,RDS(ON)= 60mΩ@VGS=- 10V
-30V/-4.5A,RDS(ON)= 80mΩ@VGS=- 6V
-30V/-3.7A,RDS(ON)= 90mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2006/10/16 Ver.1
Page 1
No Preview Available ! |
SPP4953
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
ORDERING INFORMATION
Part Number
SPP4953S8RG
SPP4953S8TG
※ SPP4953S8RG : 13” Tape Reel ; Pb – Free
※ SPP4953S8TG : Tube ; Pb – Free
Package
SOP- 8P
SOP- 8P
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
www.DataSheet4U.com
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Part Marking
SPP4953
SPP4953
Typical
-30
±20
-6.2
-4.0
-30
-2.3
2.8
1.8
-55/150
-55/150
70
Unit
V
V
A
A
A
W
℃
℃
℃/W
2006/10/16 Ver.1
Page 2
No Preview Available ! |
SPP4953
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
www.DataSheet4U.com
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
IDSS VDS=-24V,VGS=0V
TJ=85℃
ID(on) VDS= -5V,VGS =-10V
RDS(on)
gfs
VGS=-10V,ID=-5.4A
VGS=-6.0V,ID=-4.6A
VGS=-4.5V,ID=-4.0A
VDS=-10V,ID=-5.0A
VSD IS=-2.0A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -5.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
Min. Typ Max. Unit
-30 V
-1.0 -3.0
±100 nA
-1
-5 uA
-25 A
0.050
0.060
0.075
9
0.060
0.080
0.090
Ω
S
-0.8 -1.2 V
15 25
4 nC
2
680
120 pF
75
7 15
10 20 nS
40 80
20 40
2006/10/16 Ver.1
Page 3
Скачать PDF:
[ SPP4953.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| SPP4953 | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP4953A | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP4953B | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP4953BS8RGB | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |