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SPP47N10L PDF даташит
| Спецификация SPP47N10L изготовлена «Infineon Technologies AG» и имеет функцию, называемую «SIPMOS Power-Transistor». |
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Детали детали
| Номер произв | SPP47N10L |
| Описание | SIPMOS Power-Transistor |
| Производители | Infineon Technologies AG |
| логотип |  |
8 Pages
No Preview Available ! |
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
SIPMOS=Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
P-TO262-3-1
Avalanche rated
dv/dt rated
Product Summary
VDS 100 V
RDS(on) 26 m
ID 47 A
P-TO263-3-2
P-TO220-3-1
Type
SPP47N10L
SPB47N10L
SPI47N10L
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4177
Q67040-S4176
tbd
Marking
47N10L
47N10L
47N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
www.DaCtaoShneteint4uU.ocoums drain current
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=47 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
ID
ID puls
EAS
EAR
Reverse diode dv/dt
dv/dt
IS=47A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Page 1
Value
47
33
188
Unit
A
400 mJ
17.5
6
kV/µs
±20 V
175 W
-55... +175
55/175/56
°C
2001-08-24
No Preview Available ! |
Preliminary data
Thermal Characteristics
Parameter
Symbol
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJC
RthJA
RthJA
SPI47N10L
SPP47N10L,SPB47N10L
Values
Unit
min. typ. max.
- - 0.85 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
-
-
VGS=0V, ID=2mA
Gate threshold voltage, VGS = VDS
ID = 2 mA
Zero gate voltage drain current
www.DaVtaDSSh=ee1t04U0.Vco,mVGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=33A
Drain-source on-state resistance
VGS=10V, ID=33A
VGS(th) 1.2 1.6
2
IDSS
IGSS
- 0.1 1
- - 100
- 10 100
RDS(on) - 25 40
RDS(on) - 18 26
Unit
V
µA
nA
m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-08-24
No Preview Available ! |
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID*RDS(on)max ,
18
ID =33A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V, VDS=25V,
f=1MHz
VDD=50V, VGS=4.5V,
ID=47A, RG=2
-
-
-
-
-
-
-
Values
typ. max.
36 -
2000
375
210
50
100
50
70
2500
470
265
75
150
75
105
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
www.DaGtaaShteeetp4Ula.ctoemau voltage
Qgs VDD=80V, ID=47A
Qgd
Qg VDD=80V, ID=47A,
VGS=0 to 10V
V(plateau) VDD=80V, ID=47A
Reverse Diode
Inverse diode continuous
forward current
IS
TC=25°C
Inverse diode direct current,
pulsed
ISM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
VGS=0V, IF=94A
VR=50V, IF=lS,
diF/dt=100A/µs
- 8 12 nC
- 16 24
- 90 135
- 3.38 - V
- - 47 A
- - 188
- 1.1 1.5 V
- 80 120 ns
- 340 510 nC
Page 3
2001-08-24
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| Номер в каталоге | Описание | Производители |
| SPP47N10 | SIPMOS Power-Transistor | Infineon Technologies AG |
| SPP47N10L | SIPMOS Power-Transistor | Infineon Technologies AG |
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