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SPP4435 PDF даташит
| Спецификация SPP4435 изготовлена «SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPP4435 |
| Описание | P-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPP4435
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP4435 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V
-30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2008/12/01 Ver.2
Page 1
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SPP4435
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
ORDERING INFORMATION
Part Number
Package
SPP4435S8RG
SOP- 8P
SPP4435S8RGB
SOP- 8P
※ SPP4435S8RG : 13” Tape Reel ; Pb – Free
※ SPP4435S8RGB : 13”Tape Reel ; Pb – Free; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Part Marking
SPP4435
SPP4435
Typical
-30
±20
-10.0
-7.0
-50
-2.3
2.8
1.8
-55/150
-55/150
70
Unit
V
V
A
A
A
W
℃
℃
℃/W
2008/12/01 Ver.2
Page 2
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SPP4435
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
IDSS VDS=-24V,VGS=0V
TJ=85℃
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-9.2A
VGS=-4.5V,ID=-7.0A
gfs VDS=-10V,ID=-9.0A
VSD IS=-2.3A,VGS =0V
-30 V
-1.0 -3.0
±100 nA
-1
-5 uA
-40 A
0.022
0.030
24
0.025
0.035
Ω
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -9.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
16 24
2.3 nC
4.5
1650
350 pF
235
16 30
17 30 nS
65 110
35 80
2008/12/01 Ver.2
Page 3
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| Номер в каталоге | Описание | Производители |
| SPP4435 | P-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPP4435B | P-Channel Enhancement Mode MOSFET | SYNC POWER |
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