SPP42N03S2L-13 PDF даташит

Спецификация SPP42N03S2L-13 изготовлена «Infineon Technologies AG» и имеет функцию, называемую «OptiMOS Power-Transistor».

Детали детали

Номер произв	SPP42N03S2L-13
Описание	OptiMOS Power-Transistor
Производители	Infineon Technologies AG
логотип

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SPP42N03S2L-13 Даташит, Описание, Даташиты

OptiMOS® Power-Transistor

Features

• N-channel

• Enhancement mode

• Logic level

• Excellent gate charge x R DS(on) product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

P-TO262-3-1

• Avalanche rated

• dv /dt rated

SPI42N03S2L-13

SPP42N03S2L-13 SPB42N03S2L-13

Product Summary

V DS

R DS(on),max

30 V

12.9 mΩ

42 A

P-TO263-3-2

P-TO220-3-1

Type

SPP42N03S2L-13

SPB42N03S2L-13

SPI42N03S2L-13

Package

P-TO220-3-1

P-TO263-3-2

P-TO262-3-1

Ordering Code

Q67042-S4034

Q67042-S4035

Q67042-S4104

Marking

2N03L13

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

www.DataSheet4U.com

Continuous drain current1)

I D T C=25 °C

T C=100 °C

Pulsed drain current

I D,pulse T C=25 °C

Avalanche energy, single pulse

Repetitive avalanche energy

E AS

E AR

I D=42 A, R GS=25 Ω

limited by T jmax 2)

Reverse diode dv /dt

dv /dt

I D=42 A, V DS=24 V,

di /dt =200 A/µs,

T j,max=175 °C

Gate source voltage

V GS

Power dissipation

P tot T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

Value

248

110

±20

-55 ... 175

55/175/56

Unit

kV/µs

°C

Rev. 2.0

page 1

2004-06-04

No Preview Available !

SPI42N03S2L-13

SPP42N03S2L-13 SPB42N03S2L-13

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

- 1.2 1.8 K/W

SMD version, device on PCB

R thJA minimal footprint

- - 62

6 cm2 cooling area3)

- 40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance4)

www.DataSheet4U.com

Gate resistance

Transconductance

V (BR)DSS V GS=0 V, I D=1 mA

V GS(th) V DS=V GS, I D=37 µA

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

V DS=30 V, V GS=0 V,

T j=125 °C

I GSS

R DS(on)

V GS=20 V, V DS=0 V

V GS=4.5 V, I D=21 A

V GS=4.5 V, I D=21 A,

SMD version

V GS=10 V, I D=21 A

V GS=10 V, I D=21 A,

SMD version

g fs

|V DS|>2|I D|R DS(on)max,

I D=42 A

1.2

- -V

1.6 2

0.01 1 µA

10 100

1 100 nA

14.9 19.9 mΩ

14.5 19.6

10.3 12.9

9.9 12.6

1 -Ω

42 - S

1) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 64 A at 25°C, for detailed information

see app.-note ANPS071E at www.infineon.com/optimos.

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

4) Diagrams are related to straight lead versions.

Rev. 2.0

page 2

2004-06-04

No Preview Available !

Parameter

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode continous forward current

www.DatDaSiohdeeet4pUu.clsoemcurrent

Diode forward voltage

Reverse recovery time

Reverse recovery charge

SPI42N03S2L-13

SPP42N03S2L-13 SPB42N03S2L-13

Symbol Conditions

min.

Values

typ.

Unit

max.

C iss

C oss

Crss

t d(on)

t d(off)

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=21 A, R G=7.8 Ω

850 1130 pF

330 440

90 130

6.5 9.8 ns

12 18

24 36

14.5 21.8

Q gs

Q gd

V plateau

V DD=24 V, I D=21 A,

V GS=0 to 10 V

- 2.7 3.6 nC

- 7.9 11.9

- 22.9 30.5

- 3.5 - V

I S,pulse

V SD

T C=25 °C

V GS=0 V, I F=42 A,

T j=25 °C

t rr

V R=15 V, I F=I S,

di F/dt =100 A/µs

Q rr

- - 42 A

- - 248

- 0.95 1.25 V

- 24 31 ns

- 18 23 nC

Rev. 2.0

page 3

2004-06-04

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Номер в каталоге	Описание	Производители
SPP42N03S2L-13	OptiMOS Power-Transistor	Infineon Technologies AG

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