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SPP8803 PDF даташит
| Спецификация SPP8803 изготовлена «SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPP8803 |
| Описание | P-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPP8803
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP8803 is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
-20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V
-20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V
-20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSSOP-8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(TSSOP – 8P)
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PART MARKING
2008 / 04 /20 Ver.1
Page 1
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SPP8803
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
D1
S1
S1
G1
G2
S2
S2
D2
ORDERING INFORMATION
Part Number
SPP8803TS8RG
SPP8803TS8TG
※ SPP8803TS8RG : 13” Tape Reel ; Pb – Free
※ SPP8803TS8TG : Tube ; Pb – Free
Package
TSSOP- 8P
TSSOP- 8P
Description
Drain
Source
Source
Gate
Gate
Source
Source
Drain
Part Marking
8803
8803
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
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Drain-Source Voltage
Parameter
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-20
±12
-7.0
-5.8
-30
-2.3
1.5
0.9
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
2008 / 04 /20 Ver.1
Page 2
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SPP8803
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-16V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55℃
ID(on) VDS≦-5V,VGS=-4.5V
RDS(on)
gfs
VSD
VGS=- 4.5V,ID=-7.0A
VGS=- 2.5V,ID=-6.0A
VGS=- 1.8V,ID=-5.0A
VDS=-5.0V,ID=-10.0A
IS=-2.5A,VGS=0V
-20
-0.35
-0.9
±100
-1
-10
V
nA
uA
-20 A
0.016
0.020
0.028
36
-0.8
0.020
0.025
0.035
-1.2
Ω
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-5.0V
ID≡-10.0A
VDS=-10V,VGS=0V
f=1MHz
VDD=-10V,RL=15Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
30 45
4.5 nC
8.0
2670
520 pF
480
25 40
45 70 ns
145 240
70 115
2008 / 04 /20 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
| SPP8803 | P-Channel Enhancement Mode MOSFET | SYNC POWER |
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