(PDF) SPP8803 Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	SPP8803
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPP8803 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSSOP-8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(TSSOP – 8P) www.DataSheet4U.com PART MARKING 2008 / 04 /20 Ver.1 Page 1 1 page SPP8803 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2008 / 04 /20 Ver.1 Page 5 5 Page

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PDF SPP8803 Data sheet ( Hoja de datos )