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SPP9547 PDF даташит

Спецификация SPP9547 изготовлена ​​​​«SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SPP9547
Описание P-Channel Enhancement Mode MOSFET
Производители SYNC POWER
логотип SYNC POWER логотип 

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SPP9547 Даташит, Описание, Даташиты
SPP9547
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP9547 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ -40V/-7.2A,RDS(ON)= 95m@VGS=- 10V
‹ -40V/-5.0A,RDS(ON)= 110m@VGS=-4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2008 / 07/ 10 Ver.2
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SPP9547 Даташит, Описание, Даташиты
SPP9547
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Part Number
SPP9547S8RGB
Package
SOP- 8P
SPP9547S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
Part Marking
SPP9547
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Drain-Source Voltage
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Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25
TA=70
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25
TA=70
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-40
±20
-7.2
-5.0
-25
-2.3
2.8
1.8
-55/150
-55/150
70
Unit
V
V
A
A
A
W
/W
2008 / 07/ 10 Ver.2
Page 2









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SPP9547 Даташит, Описание, Даташиты
SPP9547
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-36V,VGS=0V
IDSS VDS=-36V,VGS=0V
TJ=85
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-7.2A
VGS=-4.5V,ID=-5.0A
gfs VDS=-15V,ID=-5.7A
VSD IS=-1.3A,VGS =0V
-40 V
-0.8 -2.5
±100 nA
-1
-5 uA
-10 A
0.082
0.095
13
0.095
0.110
S
-0.55 -1.0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -3.5A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15
ID-1.0A,VGEN=-10V
RG=6
9 12
1.5 nC
2.0
500
95 pF
50
8 20
10 20 nS
30 35
15 20
2008 / 07/ 10 Ver.2
Page 3










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Номер в каталогеОписаниеПроизводители
SPP9547P-Channel Enhancement Mode MOSFETSYNC POWER
SYNC POWER

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