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SPP9435A PDF даташит
| Спецификация SPP9435A изготовлена «SYNC POWER» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | SPP9435A |
| Описание | P-Channel Enhancement Mode MOSFET |
| Производители | SYNC POWER |
| логотип |  |
8 Pages
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SPP9435A
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP9435A is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-30V/-5.3A,RDS(ON)= 65mΩ@VGS=- 10V
-30V/-4.2A,RDS(ON)= 100mΩ@VGS=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2007/ 06 / 20 Ver.1
Page 1
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SPP9435A
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
ORDERING INFORMATION
Part Number
SPP9435AS8RG
SPP9435AS8TG
※ SPP9435AS8RG : 13” Tape Reel ; Pb – Free
※ SPP9435AS8TG : Tube ; Pb – Free
Package
SOP- 8P
SOP- 8P
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Part Marking
SPP9435A
SPP9435A
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
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Drain-Source Voltage
Parameter
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
2007/ 06 / 20 Ver.1
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-30
±20
-6.8
-4.6
-30
-2.3
2.8
1.8
-55/150
-55/150
70
Unit
V
V
A
A
A
W
℃
℃
℃/W
Page 2
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SPP9435A
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
IDSS VDS=-24V,VGS=0V
TJ=85℃
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-5.3A
VGS=-4.5V,ID=-4.2A
gfs VDS=-15V,ID=-5.7A
VSD IS=-2.0A,VGS =0V
-30 V
-1.0 -3.0
±100 nA
-1
-5 uA
-10 A
0.055
0.090
13
0.065
0.100
Ω
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -4.6A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
27 32
4 nC
6.5
850
150 pF
85
14 30
13 45 nS
56 100
30 90
2007/ 06 / 20 Ver.1
Page 3
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| Номер в каталоге | Описание | Производители |
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