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FGA70N30TD PDF даташит
| Спецификация FGA70N30TD изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «70A PDP IGBT». |
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Детали детали
| Номер произв | FGA70N30TD |
| Описание | 70A PDP IGBT |
| Производители | Fairchild Semiconductor |
| логотип |  |
9 Pages
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FGA70N30TD
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 40A
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
December 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
G
E
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC pulse(1)*
Pulsed Collector Current
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IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
Maximum Power Dissipation
PD Maximum Power Dissipation
@ TC = 25oC
@ TC = 100°C
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT) Thermal Resistance, Junction-to-Case
RθJC(DIODE) Thermal Resistance, Junction-to-Case for Diode
RθJA
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
Ratings
300
±30
160
10
40
201
90.6
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.62
1.56
40
©2006 Fairchild Semiconductor Corporation
FGA70N30TD Rev. A
1
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
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Package Marking and Ordering Information
Device Marking
Device
FGA70N30TD
FGA70N30TDTU
Package
TO-3P
Packaging
Type
Tube
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
∆BVCES/
∆TJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC =20A, VGE = 15V
IC =40A, VGE = 15V
IC =70A, VGE = 15V
TC = 25oC
IC = 70A, VGE = 15V
TC = 125oC
Dynamic Characteristics
Cies Input Capacitance
Coes
Output Capacitance
Cres Reverse Transfer Capacitance
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Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 30V, VGE = 0V
f = 1MHz
VCC = 200V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 125oC
VCE = 200V, IC = 40A
VGE = 15V
Qty per Tube
30ea
Max Qty
per Box
-
Min. Typ. Max. Units
300 --
--
V
-- 0.2 -- V/oC
-- -- 250 uA
-- -- ± 400 nA
3.0 4.5 5.5
-- 1.2 1.5
-- 1.5 --
-- 1.8 --
-- 1.9 --
V
V
V
V
V
-- 3000 --
-- 160 --
-- 110 --
pF
pF
pF
-- 32 -- ns
-- 90 -- ns
-- 175 --
ns
-- 170 300 ns
-- 30 -- ns
-- 90 -- ns
-- 185 --
ns
-- 235 --
ns
-- 125 --
nC
-- 25 -- nC
-- 55 -- nC
FGA70N30TD Rev. A
2
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Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10A
TC = 25°C
TC = 125°C
trr Diode Reverse Recovery Time
TC = 25°C
IF = 10A
TC = 125°C
Irr
Diode Peak Reverse Recovery Cur- dI/dt = 200A/µs
TC = 25°C
rent Diode Forward Voltage TC = 125°C
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.1
0.9
21
35
2.8
5.6
29.4
98
Max.
1.4
--
--
--
--
--
--
--
Units
V
ns
A
nC
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FGA70N30TD Rev. A
3
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| Номер в каталоге | Описание | Производители |
| FGA70N30T | 70A PDP IGBT | Fairchild Semiconductor |
| FGA70N30TD | 70A PDP IGBT | Fairchild Semiconductor |
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