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FGA70N30T PDF даташит
| Спецификация FGA70N30T изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «70A PDP IGBT». |
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Детали детали
| Номер произв | FGA70N30T |
| Описание | 70A PDP IGBT |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
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FGA70N30T
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 40A
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
December 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC pulse(1)*
Pulsed Collector Current
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Maximum Power Dissipation
PD Maximum Power Dissipation
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
G
E
Ratings
300
±30
160
201
90.6
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.62
40
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FGA70N30T Rev. A
1
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Package Marking and Ordering Information
Device Marking
Device
FGA70N30T
FGA70N30TTU
Package
TO-3P
Packaging
Type
Tube
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
∆BVCES/
∆TJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC =20A, VGE = 15V
IC =40A, VGE = 15V
IC =70A, VGE = 15V
TC = 25oC
IC = 70A, VGE = 15V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
www.DataStdh(oene)t4U.comTurn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
VCC = 200V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 125oC
VCE = 200V, IC = 40A
VGE = 15V
Qty per Tube
30ea
Max Qty
per Box
-
Min. Typ. Max. Units
300 --
--
V
-- 0.2 -- V/oC
-- -- 250 uA
-- -- ± 400 nA
3.0 4.5 5.5
-- 1.2 1.5
-- 1.5 --
-- 1.8 --
-- 1.9 --
V
V
V
V
V
-- 3000 --
-- 160 --
-- 110 --
pF
pF
pF
-- 32 -- ns
-- 90 -- ns
-- 175 --
ns
-- 170 300 ns
-- 30 -- ns
-- 90 -- ns
-- 185 --
ns
-- 235 --
ns
-- 125 --
nC
-- 25 -- nC
-- 55 -- nC
2 www.fairchildsemi.com
FGA70N30T Rev. A
No Preview Available ! |
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
TC = 25oC
10V
20V
120 15V
12V
80
VGE = 8V
40
Figure 2. Typical Output Characteristics
160
TC = 125oC
10V
120 20V
15V
12V
80
VGE = 8V
40
0
0246
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
160
Common Emitter
VGE = 15V
TC = 25oC
120 TC = 125oC
8
80
40
0
0246
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
160
Common Emitter
100 VCE = 20V
TC = 25oC
TC = 125oC
8
10
0
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123
Collector-Emitter Voltage, VCE [V]
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.4
Common Emitter
VGE = 15V
2.0
70A
1.6
40A
1.2
IC = 20A
0.8
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
1
2 4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
40A
4
70A
IC = 20A
0
48
12 16
Gate-Emitter Voltage, VGE [V]
20
3 www.fairchildsemi.com
FGA70N30T Rev. A
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| Номер в каталоге | Описание | Производители |
| FGA70N30T | 70A PDP IGBT | Fairchild Semiconductor |
| FGA70N30TD | 70A PDP IGBT | Fairchild Semiconductor |
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