|
FGA30N60LSD PDF даташит
| Спецификация FGA30N60LSD изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «MOSFETs and bipolar transistors». |
|
|
Детали детали
| Номер произв | FGA30N60LSD |
| Описание | MOSFETs and bipolar transistors |
| Производители | Fairchild Semiconductor |
| логотип |  |
9 Pages
No Preview Available ! |
FGA30N60LSD
Features
• Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
October 2008
tm
General Description
The FGA30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
www.DataSIChMee(1t)4U.com Pulsed Collector Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 25°C
@ TC = 100°C
PD Maximum Power Dissipation
@ TC = 25°C
Maximum Power Dissipation
@ TC = 100°C
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA30N60LSD
600
± 20
60
30
90
150
480
192
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.26
0.92
40
Units
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev. A
1
www.fairchildsemi.com
No Preview Available ! |
Package Marking and Ordering Information
Device Marking
Device
FGA30N60LSD FGA30N60LSDTU
Package
TO-3PN
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC = 30A, VGE = 15V
IC = 30A, VGE = 15V,
TC = 125°C
IC = 60 A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
www.DataSheet4U.com
td(off)
Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
Le Internal Emitter Inductance
VCC = 400 V, IC = 30A,
RG = 6.8Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 400 V, IC = 30A,
RG =6.8Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 30A,
VGE = 15V
Measured 5mm from PKG
600 --
--
V
-- 0.6 -- V/°C
-- -- 250 uA
-- -- ±250 nA
4.0 5.5 7.0
-- 1.1 1.4
-- 1.0 --
-- 1.3 --
V
V
V
V
-- 3550 --
-- 245 --
-- 90 --
pF
pF
pF
-- 18 -- ns
-- 46 -- ns
-- 250 --
ns
-- 1.3 2.0 us
-- 1.1 -- mJ
-- 21 -- mJ
-- 17 -- ns
-- 45 -- ns
-- 270 --
ns
-- 2.6 --
us
-- 1.1 -- mJ
-- 36 -- mJ
-- 225 --
nC
-- 30 -- nC
-- 105 --
nC
-- 7 -- nH
FGA30N60LSD Rev. A
2
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
VFM IF = 15A
IF = 15A
TC = 25 °C
TC = 125 °C
-
-
IRM VR = 600V
TC = 25 °C
-
trr
IF =1A, di/dt = 100A/µs, VCC = 30V
TC = 25 °C
-
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
-
ta
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
-
tb
TC = 25 °C
-
Qrr
TC = 25 °C
-
Typ.
1.8
1.6
-
-
-
18
13
27.5
Max
2.2
-
100
35
40
-
-
-
Units
V
V
µA
ns
ns
ns
ns
nC
www.DataSheet4U.com
FGA30N60LSD Rev. A
3
www.fairchildsemi.com
Скачать PDF:
[ FGA30N60LSD.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| FGA30N60LSD | MOSFETs and bipolar transistors | Fairchild Semiconductor |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |