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FGA30N120FTD PDF даташит
| Спецификация FGA30N120FTD изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «Trench IGBT». |
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Детали детали
| Номер произв | FGA30N120FTD |
| Описание | Trench IGBT |
| Производители | Fairchild Semiconductor |
| логотип |  |
10 Pages
No Preview Available ! |
April 2013
FGA30N120FTD
1200 V, 30 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 30 A
• High Input Impedance
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
1
G
E
Ratings
1200
± 25
60
30
90
30
339
132
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
Max.
0.38
1.2
Unit
oC/W
oC/W
www.fairchildsemi.com
No Preview Available ! |
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Informa-
tion
Device Marking
Device
FGA30N120FTD FGA30N120FTDTU
Package
TO-3PN
- 40 oC/W
Eco Status
RoHS
Packaging
Type
Tube
Qty per Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250μA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
ITCC==3102A5,oVCGE = 15V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 30A,
RG = 10Ω, VGE
Resistive Load,
= 15V,
TC = 25oC
VCC = 600V, IC = 30A,
RG = 10Ω, VGE
Resistive Load,
= 15V,
TC = 125oC
VCE = 600V, IC = 30A,
VGE = 15V
1200
-
-
V
- - 1 mA
-
-
±250
nA
3.5 6 7.5
- 1.6 2
- 2.0 -
V
V
V
- 5140 -
- 150 -
- 95 -
pF
pF
pF
- 31 - ns
- 101 -
ns
- 198 -
ns
- 259 -
ns
- 0.54 -
mJ
-
1.16 1.51
mJ
- 1.70 -
mJ
- 40 - ns
- 127 -
ns
- 211 -
ns
- 364 -
ns
- 0.74 -
mJ
- 1.63 -
mJ
- 2.37 -
mJ
- 208 -
nC
- 41 - nC
- 97 - nC
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
2
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 30A
TC = 25oC
TC = 125oC
trr
Irr
Diode Reverse Recovery Time
IF =30A,
Diode Peak Reverse Recovery Current di/dt = 200A/μs
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Qrr Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
-
-
Typ.
1.3
1.3
730
775
43
47
5.9
18.2
Max
1.7
-
-
-
-
-
-
-
Unit
V
ns
A
μC
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FGA30N120FTD | Trench IGBT | Fairchild Semiconductor |
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