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FFH50US60S PDF даташит
| Спецификация FFH50US60S изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «Diode ( Rectifier )». |
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Детали детали
| Номер произв | FFH50US60S |
| Описание | Diode ( Rectifier ) |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
No Preview Available ! |
September 2003
FFH50US60S
50A, 600V Stealth™ Diode
General Description
The FFH50US60S is a Stealth™ diode optimized for low loss
performance in output rectification. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)), low VF and
soft recovery under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching
applications. Lower VF and IRM(REC) reduces diode losses.
Formerly developmental type TA49468.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 80ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated . . . . . . . . . . . . . . . . . . . . 20mJ
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptible Power Supplies
• Motor Drives
• Welders
Package
JEDEC STYLE 2 LEAD TO-247
ANODE
CATHODE
Symbol
K
www.DataSheet4U.com
CATHODE
(BOTTOM SIDE
METAL)
A
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 120oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
600
600
600
50
100
500
200
20
-55 to 175
300
260
V
V
V
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
FFH50US60S Rev A3
No Preview Available ! |
Package Marking and Ordering Information
Device Marking
50US60S
Device
FFH50US60S
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current
VR = 600V
TC = 25°C
TC = 125°C
- - 100 µA
- - 1 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 50A
TC = 25°C
TC = 125°C
- 1.38 1.54 V
- 1.37 1.53 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
- 110 -
pF
Switching Characteristics
trr Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
dIM/dt
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
www.DataSheet4TUh.ceomrmal Characteristics
IF = 1A, dIF/dt = 100A/µs, VR = 15V
IF = 50A, dIF/dt = 100A/µs, VR = 15V
IF = 50A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
IF = 50A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
IF = 50A,
dIF/dt = 1000A/µs,
VR = 390V,
TC = 125°C
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
47 80 ns
75 124 ns
113 -
ns
9.6 -
A
0.9 - µC
235 -
ns
1.5 -
-
15 -
A
2.3 - µC
110 -
ns
0.8 -
-
46 -
A
3.1 - µC
1000 - A/µs
- 0.75 °C/W
- 30 °C/W
©2003 Fairchild Semiconductor Corporation
FFH50US60S Rev A3
No Preview Available ! |
Typical Performance Curves
100
90
80
70
60
50 175oC
40 125oC
30 75oC
20 25oC
10
0
0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
1000
100
10
1
175oC
150oC
125oC
100oC
75oC
0.1
0.01
100
25oC
200 300 400 500
VR, REVERSE VOLTAGE (V)
600
Figure 2. Reverse Current vs Reverse Voltage
200
VR = 390V, TC = 125oC
180
160 tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs
140
120
100
80
60
40
20
0
0
ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs
10 20 30 40 50 60 70 80 90 100
IF , FORWARD CURRENT (A)
Figure 3.
www.DataSheet4U.com
ta and tb Curves vs Forward Current
50
VR = 390V, TC = 125oC
40 dIF/dt = 800A/µs
30
dIF/dt = 500A/µs
20
dIF/dt = 200A/µs
10
225
VR = 390V, TC = 125oC
200
tb at IF = 100A, 50A, 25A
175
150
125
100
75
50
25 ta at IF = 100A, 50A, 25A
0 200 400
600
800 1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. ta and tb Curves vs dIF/dt
1200
60
VR = 390V, TC = 125oC
50
40
IF = 100A
30
IF = 50A
20
IF = 25A
10
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (A)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
0
0 200 400 600 800 1000 1200
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
©2003 Fairchild Semiconductor Corporation
FFH50US60S Rev A3
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| Номер в каталоге | Описание | Производители |
| FFH50US60S | Diode ( Rectifier ) | Fairchild Semiconductor |
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