|
FFH30US30DN PDF даташит
| Спецификация FFH30US30DN изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «300V Stealth Diode». |
|
|
Детали детали
| Номер произв | FFH30US30DN |
| Описание | 300V Stealth Diode |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
No Preview Available ! |
June 2003
FFH30US30DN
30A, 300V Stealth™ Diode
General Description
The FFH30US30DN is a Stealth™ diode optimized for low
loss performance in output rectification. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)), low VF and
soft recovery under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching
applications. Lower VF and IRM(REC) reduces diode losses.
Formerly developmental type TA49449.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 0.45
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 50ns
• High Operating Temperature . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
• Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptable Power Supplies
• Motor Drives
• Welders
Package
JEDEC STYLE 3 LEAD TO-247
ANODE 2
CATHODE
ANODE 1
Symbol
K
www.DataSheet4U.com
CATHODE
(BOTTOM SIDE
METAL)
A1 A2
Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 160oC)
Total Device Current (Both Legs)
300 V
300 V
300 V
30 A
60 A
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
70
325
230
20
-55 to 175
300
260
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
No Preview Available ! |
Package Marking and Ordering Information
Device Marking
30US30DN
Device
FFH30US30DN
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current
VR = 300V
TC = 25°C
TC = 125°C
- - 100 µA
- - 1 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 30A
TC = 25°C
TC = 125°C
- 0.93 1.0 V
- 0.8 0.87 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
- 410 -
pF
Switching Characteristics
trr Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
IF = 1A, dIF/dt = 100A/µs, VR = 15V
IF = 30A, dIF/dt = 100A/µs, VR = 15V
IF = 30A,
dIF/dt = 200A/µs,
VR = 195V, TC = 25°C
IF = 30A,
dIF/dt = 200A/µs,
VR =195V,
TC = 125°C
IF = 30A,
dIF/dt = 1000A/µs,
VR =195V,
TC = 125°C
-
-
-
-
-
-
-
-
-
-
-
-
-
29 50
32 55
46 -
5.3 -
140 -
77 -
0.45 -
9-
400 -
54 -
0.49 -
32 -
930 -
ns
ns
ns
A
nC
ns
-
A
nC
ns
-
A
nC
Thermal Characteristics
www.DataSheet4U.com
RθJC Thermal Resistance Junction to Case TO-247
RθJA Thermal Resistance Junction to Ambient TO-247
- - 0.65 °C/W
- - 30 °C/W
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
No Preview Available ! |
Typical Performance Curves (per leg)
60
50
175oC
40
125oC
30
75oC
20
25oC
10
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
1000
100
10
1
175oC
150oC
125oC
100oC
75oC
0.1
0.01
50
25oC
100 150 200 250
VR, REVERSE VOLTAGE (V)
300
Figure 2. Reverse Current vs Reverse Voltage
60
VR = 195V, TC = 125oC
50
40
30 tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs
20
10
ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs
0
0 10 20 30 40 50 60
IF , FORWARD CURRENT (A)
Figure 3.
www.DataSheet4U.com
ta and tb Curves vs Forward Current
35
VR = 195V, TC = 125oC
30
25
dIF/dt = 800A/µs
20
15 dIF/dt = 500A/µs
10
5 dIF/dt = 200A/µs
0
0 10 20 30 40 50 60
IF, FORWARD CURRENT (A)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
70
VR = 195V, TC = 125oC
60
50
tb at IF = 60A, 30A, 15A
40
30
ta at IF = 60A, 30A, 15A
20
10
0
0 200 400 600 800 1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. ta and tb Curves vs dIF/dt
1200
40
VR = 195V, TC = 125oC
35
30
25
IF = 60A
20
IF = 30A
15
IF = 15A
10
5
200
400
600
800
1000
1200
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
Скачать PDF:
[ FFH30US30DN.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| FFH30US30DN | 300V Stealth Diode | Fairchild Semiconductor |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |