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FFH30S60S PDF даташит
| Спецификация FFH30S60S изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «Stealth 2 Rectifier». |
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Детали детали
| Номер произв | FFH30S60S |
| Описание | Stealth 2 Rectifier |
| Производители | Fairchild Semiconductor |
| логотип |  |
5 Pages
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FFH30S60S
Stealth 2 Rectifier
Features
• High Speed Switching, trr < 40ns @ IF = 30A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
September 2007
tm
30A, 600V Stealth 2 Rectifier
The FFH30S60S is stealth2 rectifier with soft recovery charac-
teristics. It is silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Pin Assigments
TO-247-2L
1. Cathode 2. Anode
1. Cathode 2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
www.DataVSRhReMet4U.com Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VR DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 102oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
Device
Package
F30S60S
FFH30S60STU
TO-247-2L
Reel Size
-
Ratings
600
600
600
30
300
-65 to +150
Units
V
V
V
A
A
oC
Ratings
1.1
Units
oC/W
Tape Width
-
Quantity
50
©2007 Fairchild Semiconductor Corporation
FFH30S60S Rev. A
1
www.fairchildsemi.com
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Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
VFM1
IF = 30A
IF = 30A
IRM1
VR = 600V
VR = 600V
trr IF = 1A, di/dt = 100A/µs, VR = 30V
trr
Irr
S factor
IF = 30A, di/dt = 200A/µs, VR = 390V
Qrr
trr
Irr
S factor
IF = 30A, di/dt = 200A/µs, VR = 390V
Qrr
WAVL
Avalanche Energy ( L = 40mH)
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 25oC
TC = 125oC
Test Circuit and Waveforms
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
20
Typ. Max. Units
2.1
1.6
2.6
-
V
-
-
100
500
µA
25 35 ns
28 40 ns
2.4 - A
0.9 -
34 - nC
75 - ns
6.3 - A
0.9 -
236 - nC
- - mJ
www.DataSheet4U.com
FFH30S60S Rev. A
2 www.fairchildsemi.com
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Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
200
100 TC = 125oC
75oC
25oC
10
1
012345
Forward Voltage, V [V]
F
Figure 3. Typical Junction Capacitance
350
Typical Capacitance
at 0V = 271 pF
280
210
140
70
www.DataSheet4U0.com
0.1
1 10
Reverse Voltage, VR [V]
Figure 5. Typical Reverse Recovery
Current vs. di/dt
10
100
8 TC = 125oC
6
TC = 75oC
4
TC = 25oC
2
0
100 150 200 250 300
di/dt [A/µs]
FFH30S60S Rev. A
Figure 2. Typical Reverse Current
vs. Reverse Voltage
1000
100 TC = 125oC
10 TC = 75oC
1
TC = 25oC
0.1
0.01
10
100 200 300 400
Reverse Voltage, VR [V]
500
600
Figure 4. Typical Reverse Recovery Time
vs. di/dt
100
80 TC = 125oC
60 TC = 75oC
40 TC = 25oC
20
100
150 200
di/dt [A/µs]
250
300
Figure 6. Forward Current Derating Curve
70
60
50
40
30
20
10
0
25
50 75 100 125
Case temperature, TC [oC]
150
3 www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FFH30S60S | Stealth 2 Rectifier | Fairchild Semiconductor |
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