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FFH15S60S PDF даташит
| Спецификация FFH15S60S изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «Stealth 2 Rectifier». |
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Детали детали
| Номер произв | FFH15S60S |
| Описание | Stealth 2 Rectifier |
| Производители | Fairchild Semiconductor |
| логотип |  |
5 Pages
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FFH15S60S
Features
• High Speed Switching, trr < 35ns @ IF = 15A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
September 2007
Stealth 2 Rectifier
tm
15A, 600V Stealth 2 Rectifier
The FFH15S60S is stealth2 rectifier with soft recovery charac-
teristics. It is silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
TO-247-2L
1. Cathode 2. Anode
1. Cathode 2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
www.DataVSRhReMet4U.com Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VR DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 120oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
Device
Package
F15S60S
FFH15S60STU
TO-247-2L
Reel Size
-
Ratings
600
600
600
15
150
-65 to +150
Units
V
V
V
A
A
oC
Ratings
1.4
Units
oC/W
Tape Width
-
Quantity
50
©2007 Fairchild Semiconductor Corporation
FFH15S60S Rev. A
1
www.fairchildsemi.com
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Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
VFM1
IF = 15A
IF = 15A
IRM1
VR = 600V
VR = 600V
trr IF = 1A, di/dt = 100A/µs, VR = 30V
trr
Irr
S factor
IF = 15A, di/dt = 200A/µs, VR = 390V
Qrr
trr
Irr
S factor
IF = 15A, di/dt = 200A/µs, VR = 390V
Qrr
WAVL
Avalanche Energy ( L = 40mH)
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 25oC
TC = 125oC
Test Circuit and Waveforms
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
20
Typ.
2.1
1.6
-
-
21
23
2.5
0.7
29
55
4.3
1.1
118
-
Max.
2.6
-
100
500
30
35
-
-
-
-
-
-
-
-
Units
V
µA
ns
ns
A
nC
ns
A
nC
mJ
www.DataSheet4U.com
FFH15S60S Rev. A
2 www.fairchildsemi.com
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Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
70
TC = 125oC
10
TC = 75oC
TC = 25oC
1
0.1
0
123
Forward Voltage, VF [V]
4
Figure 3. Typical Junction Capacitance
180
Typical Capacitance
at 0V = 180 pF
150
120
90
60
www.DataSheet4U.com
30
0.1
1 10
Reverse Voltage, VR [V]
Figure 5. Typical Reverse Recovery
Current vs. di/dt
7
100
6 TC = 125oC
5
4
TC = 75oC
3
TC = 25oC
2
IF = 15A
1
100 200 300 400 500 600
di/dt [A/µs]
FFH15S60S Rev. A
Figure 2. Typical Reverse Current
vs. Reverse Voltage
100
TC = 125oC
10
1 TC =75oC
0.1
TC = 25oC
0.01
10
100 200 300 400 500
Reverse Voltage, VR [V]
600
Figure 4. Typical Reverse Recovery Time
vs. di/dt
60
TC = 125oC
IF = 15A
50
40 TC = 75oC
30 TC = 25oC
20
100 200 300 400 500 600
di/dt [A/µs]
Figure 6. Forward Current Derating Curve
50
40
30
DC
20
10
0
25 50 75 100 125 150
Case temperature, TC [oC]
3 www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FFH15S60S | Stealth 2 Rectifier | Fairchild Semiconductor |
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