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FDS8882 PDF даташит
| Спецификация FDS8882 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDS8882 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
No Preview Available ! |
FDS8882
N-Channel PowerTrench® MOSFET
30 V, 9 A, 20.0 mΩ
December 2008
Features
General Description
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
The FDS8882 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
Notebook System Regulators
DC/DC Converters
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
www.DataSheet4U.com
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
9
21
32
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8882
Device
FDS8882
Package
SO8
Reel Size
13 “
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 8 A
VGS = 10 V, ID = 9 A, TJ =125 °C
VDS = 5 V, ID = 9 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 9 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 15 V,
ID = 9 A
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 9 A
VGS = 0 V, IS = 2.1 A
IF = 9 A, di/dt = 100 A/µs
Min Typ Max Units
30 V
4 mV/°C
1
±100
µA
nA
1.0 1.7 3.0
V
-6 mV/°C
13.2
16.6
18.5
36
20.0
22.5
28.0
mΩ
S
707 940
138 185
88 135
1.8
pF
pF
pF
Ω
7 14 ns
3 10 ns
19 35 ns
4 10 ns
14 20 nC
8 11 nC
2.2 nC
2.8 nC
0.8 1.2
0.7 1.2
V
17 31 ns
6 12 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V.
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
21
18
15
12
9
6
3
0
0
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
3.0
VGS = 3 V
2.5
2.0
VGS = 3.5 V
1.5
VGS = 6 V
VGS = 4.5 V
1.0
0.5
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
3 6 9 12 15 18 21
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 9 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
50
40
30
20
TJ = 25 oC
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 9 A
TJ = 125 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
21
PULSE DURATION = 80 µs
18 DUTY CYCLE = 0.5% MAX
VDS = 5 V
15
12
9
TJ = 150 oC
6 TJ = 25 oC
3
TJ = -55 oC
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
30
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
3
www.fairchildsemi.com
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