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FDS8842NZ PDF даташит
| Спецификация FDS8842NZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDS8842NZ |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
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FDS8842NZ
N-Channel PowerTrench® MOSFET
February 2009
40 V, 14.9 A, 7.0 mΩ
Features
General Description
Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A
Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A
HBM ESD protection level of 4.4 kV typical(note 3)
High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
The FDS8842NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
Synchronous Buck for Notebook Vcore and Server
Notebook Battery
Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D
D
D
D
G
S
S
S
www.DataSheet4U.com
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 1b)
Ratings
40
±20
14.9
93
253
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8842NZ
Device
FDS8842NZ
Package
SO8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
40 V
35 mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 14.9 A
VGS = 4.5 V, ID = 11.6 A
VGS = 10 V, ID = 14.9 A, TJ =125 °C
VDS = 5 V, ID = 14.9 A
1.0
1.9 3.0
V
-6 mV/°C
5.6 7.0
6.7 11.6 mΩ
8.9 11.1
111 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
f = 1 MHz
2890
340
220
0.8
3845
455
330
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 20 V, ID = 14.9 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 20 V,
ID = 14.9 A
13 23 ns
7 14 ns
34 54 ns
5 10 ns
52 73 nC
27 38 nC
8.6 nC
9.7 nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 14.9 A
VGS = 0 V, IS = 2.1 A
0.8 1.2
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14.9 A, di/dt = 100 A/µs
26 42 ns
15 27 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25 °C, L = 3 mH, IAS = 13 A, VDD = 40 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
60
VGS = 10 V
50 VGS = 6 V
VGS = 4.5 V
40
VGS = 3.5 V
30 PULSE DURATION = 80 µs
VGS = 4 V DUTY CYCLE = 0.5% MAX
20
10
VGS = 3 V
0
0 0.3 0.6 0.9 1.2 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
VGS = 3 V
4
3
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
2
VGS = 4 V VGS = 4.5 V
1
VGS = 6 V VGS = 10 V
0
0 10 20 30 40 50 60
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = 14.9 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
60
PULSE DURATION = 80 µs
50 DUTY CYCLE = 0.5% MAX
VDS = 5 V
40
30
20
10
0
0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
123
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
20
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15
ID = 14.9 A
10 TJ = 125 oC
5 TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
60
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
TJ = -55 oC
0.1
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
3
www.fairchildsemi.com
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