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FDS8672S PDF даташит
| Спецификация FDS8672S изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDS8672S |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
No Preview Available ! |
December 2007
FDS8672S
N-Channel PowerTrench® SyncFET™
30V, 18A, 4.8mΩ
tm
Features
Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A
Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A
Includes SyncFET Schottky body diode
High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capability
100% Rg (Gate Resistance) tested
Termination is Lead-free and RoHS Compliant
General Description
The FDS8672S is designed to replace a single MOSFET and
Schottky diode in synchronous DC/DC power supplies. This 30V
MOSFET is designed to maximize power conversion efficiency,
providing a low rDS(on) and low gate charge. The FDS8672S
includes a patented combination of a MOSFET monolithically
integrated with a Schottky diode using Fairchild’s monolithic
SyncFET technology.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore low side switch
Point of load low side switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
www.DataShMeeOt4US.cFoEmT Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
18
80
216
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8672S
Device
FDS8672S
Package
SO8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1mA, VGS = 0V
ID = 10mA, referenced to 25°C
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
30 V
33 mV/°C
500
±100
µA
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1mA
1.0 2.1 3.0
V
ID = 10mA, referenced to 25°C
-5 mV/°C
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 18A, TJ = 125°C
VDS = 5V, ID = 18A
3.8 4.8
5.3 7.0 mΩ
5.3 7.8
78 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
2005
985
135
0.6
2670
1310
205
2.0
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15V, ID = 18A,
VGS = 10V, RGEN = 6Ω
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 15V,
ID = 18A
12 22 ns
4 10 ns
26 42 ns
3 10 ns
29 41 nC
15 21 nC
5.5 nC
3.7 nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 18A
VGS = 0V, IS = 1.8A
0.8 1.2
0.4 0.7
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 18A, di/dt = 300A/µs
27 43 ns
31 50 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25°C unless otherwise noted
80
60
VGS = 10V
VGS = 4.5V
40
VGS = 4V
20
VGS = 3.5V
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0123
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
PULSE DURATION = 80µs
3.5 DUTY CYCLE = 0.5%MAX
3.0 VGS = 3V
2.5
VGS = 3.5V
2.0
VGS = 4V
1.5
1.0
0.5
0
VGS = 4.5V
20 40
ID, DRAIN CURRENT(A)
VGS = 10V
60 80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 18A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
VDD = 5V
40
TJ = 125oC
20
TJ = 25oC
TJ = -55oC
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
15
ID = 18A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
12
9
TJ = 125oC
6
TJ = 25oC
3
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
VGS = 0V
10
TJ = 125oC
1
10
0.1 TJ = 25oC
0.01
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
3
www.fairchildsemi.com
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| FDS8672S | N-Channel MOSFET | Fairchild Semiconductor |
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