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FDS8638 PDF даташит
| Спецификация FDS8638 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDS8638 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
No Preview Available ! |
FDS8638
N-Channel PowerTrench® MOSFET
40 V, 18 A, 4.3 mΩ
Features
General Description
March 2009
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A
High performance trench technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
Synchronous Rectifier
Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
www.DataSheet4U.com
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
40
±20
18
100
541
2.5
1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8638
Device
FDS8638
Package
SO-8
Reel Size
13 “
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 16 A
VGS = 10 V, ID = 18 A, TJ = 125 °C
VDS = 5 V, ID = 18 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 20 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 20 V,
ID = 18 A
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 18 A
VGS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
IF = 18 A, di/dt = 100 A/µs
Min
40
1.0
Typ
32
1.9
-7
3.3
4.0
4.8
88
4270
1175
120
0.9
16
6
39
5
61
27
12
7.2
0.81
0.71
51
30
Max Units
1
±100
V
mV/°C
µA
nA
3.0 V
mV/°C
4.3
5.4 mΩ
6.3
S
5680
1560
180
pF
pF
pF
Ω
30 ns
13 ns
63 ns
10 ns
86 nC
39 nC
nC
nC
1.3
V
1.2
82 ns
49 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
100
VGS = 10 V
80
VGS = 3.5 V
VGS = 4.5 V
60
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
20
0
0.0
VGS = 3 V
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 4 V
VGS = 4.5 V
20 40 60
ID, DRAIN CURRENT (A)
VGS = 10 V
80 100
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 18 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
20
ID = 18 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
60
TJ = 150 oC
40
TJ = 25 oC
20
TJ = -55 oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDS8638 | N-Channel MOSFET | Fairchild Semiconductor |
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