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FDP8447L PDF даташит
| Спецификация FDP8447L изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDP8447L |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
6 Pages
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FDP8447L
N-Channel PowerTrench® MOSFET
40V, 50A, 8.7mΩ
May 2007
tm
Features
General Description
Max rDS(on) = 8.7mΩ at VGS = 10V, ID = 14A
Max rDS(on) = 11.2mΩ at VGS = 4.5V, ID = 11A
Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench technology to deliver
low rDS(on) and optimized BVDSS capability to offer superior
performance benefit in the application.
RoHS Compliant
Applications
Inverter
Power Supplies
D
GD
S
TO-220
FDP Series
G
S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TC =
25°C
unless
otherwise
noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25°C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25°C
TA = 25°C
-Pulsed
EAS
PD
TJ, TSTG
Drain-Source Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1)
(Note 3)
(Note 1)
Ratings
40
±20
50
65
12
100
153
60
2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
2.1
62.5
°C/W
Device Marking
FDP8447L
Device
FDP8447L
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50units
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
40
V
ID = 250µA, referenced to 25°C
34 mV/°C
VDS = 32V,
VGS = ±20V, VDS = 0V
1
±100
µA
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 14A, TJ = 125°C
VDD = 5V, ID = 14A
1
1.7 3
V
-6 mV/°C
7.7 8.7
8.9 11.2
12.1 13.7
74
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
1880
245
150
1.4
2500
325
225
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 20V, ID = 14A,
VGS = 10V, RGEN = 6Ω
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 20V,
ID = 14A
9 18 ns
7 14 ns
28 45 ns
4 10 ns
35 49 nC
19 27 nC
4.7 nC
6.2 nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 14A (Note 2)
IF = 14A, di/dt = 100A/µs
0.8 1.2
V
28 42 ns
22 33 nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25°C unless otherwise noted
100
PULSE DURATION = 80µs
80 VGS = 10V DUTY CYCLE = 0.5%MAX
VGS = 4.5V
VGS = 4V
60
VGS = 3.5V
40
3.0
VGS = 3V
2.5
VGS = 3.5V
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
1.5 VGS = 4V
20
VGS = 3V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.8
ID = 14A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
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100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
VDS = 5V
60
40
TJ = 25oC
20 TJ = 125oC
TJ = -55oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
1.0
0.5
0
VGS = 4.5V
VGS = 10V
20 40 60 80 100
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
20
ID = 7A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
16
12 TJ = 125oC
TJ = 25oC
8
4
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
VGS = 0V
10
10
1 TJ = 125oC
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
3
www.fairchildsemi.com
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| FDP8447L | N-Channel MOSFET | Fairchild Semiconductor |
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