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FDP8443 PDF даташит
| Спецификация FDP8443 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDP8443 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
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August 2007
FDP8443
N-Channel PowerTrench® MOSFET
40V, 80A, 3.5mΩ
Features
Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 142nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
tm
www.DataSheet4U.com
©2007 Fairchild Semiconductor Corporation
FDP8443 Rev. A
1
www.fairchildsemi.com
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MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 144oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
40
±20
80
20
See Figure 4
531
188
1.25
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Package Marking and Ordering Information
(Note 2)
0.8
62
oC/W
oC/W
Device Marking
FDP8443
Device
FDP8443
Package
TO-220AB
Reel Size
Tube
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
Tape Width
N/A
Quantity
50 units
Min Typ Max Units
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 32V,
VGS = 0V
TC = 150oC
VGS = ±20V
40
-
-
-
- -V
-
-
1
250
μA
- ±100 nA
www.DataSheet4UV.GcSo(mth)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, VGS= 10V
ID
TJ
=
=
8107A5o, CVGS=
10V,
2 2.8 4
V
- 2.7 3.5
- 4.7 6.1 mΩ
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 35A
Ig = 1mA
- 9310
-
pF
- 800 - pF
- 510 - pF
- 0.9 - Ω
-
142 185
nC
- 17.5 23 nC
- 36 - nC
- 18.8 - nC
- 32
- nC
FDP8443 Rev. A
2 www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics (VGS = 10V)
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 35A
ISD = 15A
ISD = 35A, dISD/dt = 100A/μs
Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.
Min Typ Max Units
- - 58 ns
- 18.4 -
ns
- 17.9 -
ns
- 55 - ns
- 13.5 -
ns
- - 109 ns
-
-
0.8 1.25
0.8 1.0
V
- 42 55 ns
- 48 62 nC
www.DataSheet4U.com
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP8443 Rev. A
3 www.fairchildsemi.com
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