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FDP8442 PDF даташит
| Спецификация FDP8442 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDP8442 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
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www.DataSheet4U.com
June 2007
FDP8442
N-Channel PowerTrench® MOSFET
40V, 80A, 3.1mΩ
Features
Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 181nC at VGS = 10V
Low Miller Charge
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Electronic Steering
Integrated Starter / Alternator
Qualified to AEC Q101
Distributed Power Architectures and VRMs
RoHS Compliant
Primary Switch for 12V Systems
AD FREE I
©2007 Fairchild Semiconductor Corporation
FDP8842 Rev. A
1
www.fairchildsemi.com
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MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC<158oC, VGS = 10V)
Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
(Note 1)
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
Ratings
40
±20
80
23
See Figure 4
720
254
1.7
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Package Marking and Ordering Information
(Note 2)
0.59
62
oC/W
oC/W
Device Marking
FDP8442
Device
FDP8442
Package
TO-220AB
Reel Size
Tube
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
Tape Width
N/A
Min Typ
Quantity
50 units
Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250µA, VGS = 0V
VDS = 32V
VGS = 0V
TJ = 150°C
VGS = ±20V
40
-
-
-
- -V
-
-
1
250
µA
-
±100
nA
VGS(th) Gate to Source Threshold Voltage
www.DataSheet4rUD.Sc(oomn) Drain to Source On Resistance
Dynamic Characteristics
VDS = VGS, ID = 250µA
ID = 80A, VGS = 10V
ID = 80A, VGS = 10V,
TJ = 175°C
2 2.9 4
V
- 2.3 3.1
- 3.9 5.3 mΩ
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
- 12200 -
- 1040 -
- 640 -
pF
pF
pF
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 80A
Ig = 1mA
-
-
-
-
-
1.0 -
181 235
23 30
49 -
26 -
Ω
nC
nC
nC
nC
- 41 - nC
FDP8842 Rev. A
2 www.fairchildsemi.com
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics
t(on)
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
VDD = 20V, ID = 80A
VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 80A
ISD = 40A
IF = 75A, di/dt = 100A/µs
IF = 75A, di/dt = 100A/µs
Notes:
1: Starting TJ = 25oC, L = 0.35mH, IAS = 64A
2: Pulse width = 100s.
Min Typ Max Units
- - 62 ns
- 19.5 -
ns
- 19.3 -
ns
- 57 - ns
- 17.2 -
ns
- - 118 ns
-
0.9 1.25
V
- 0.8 1.0 V
- 49 64 ns
- 70 91 nC
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This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP8842 Rev. A
3 www.fairchildsemi.com
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