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FDP8440 PDF даташит
| Спецификация FDP8440 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDP8440 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
January 2009
FDP8440
N-Channel PowerTrench® MOSFET
40V, 277A, 2.2mΩ
Features
• RDS(on) = 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A
• Qg(tot) = 345nC (Typ.)@ VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• RoHS Compliant
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V Systems
tm
D
GDS
TO-220
FDP Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
www.DataSheSeyt4mU.bcooml
VDSS
VGSS
ID
IDM
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-
-
-
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC, Silicon Limited)
100oC, Silicon Limited)
25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 2)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
Ratings
40
±20
277*
196*
100
500
1682
306
2.04
-55 to +175
300
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient
0.49
0.5
62.5
Units
V
V
A
A
mJ
W
W/oC
oC
oC
oC/W
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. A6
1
www.fairchildsemi.com
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Package Marking and Ordering Information
Device Marking
FDP8440
Device
FDP8440
Package
TO-220
Reel Size
N/A
Tape Width
N/A
Quantity
50units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
On Characteristics
VGS = 0V, ID = 250μA
VDS = 32V
VGS = 0V
VGS = ±20V
TC = 150oC
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 80A
VGS = 10V, ID = 80A
VTCGS==17150oVC, ID = 80A,
Ciss
Coss
Crss
RG
Qg(tot)
Qg(2)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1.0MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 20V
ID = 80A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
w w w .td(Don) a t a TuSrn-hOneDeelayt T4imeU . c o m
tr Rise Time
td(off)
Turn-Off Delay Time
VDD = 20V,ID = 80A
VGS = 10V, RGEN = 7Ω
tf Fall Time
tOFF Turn-Off Time
Drain-Source Diode Characteristics and Maximum Ratings
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt = 100A/μs
ISD = 75A, dISD/dt = 100A/μs
Min Typ Max Units
40 --
-- --
-- V
1 μA
-- -- 250 μA
-- -- ±100 nA
1 -- 3 V
-- 1.88 2.4
--
1.64 2.2
mΩ
-- 3.00 4.4
-- 18600 24740 pF
--
1840 2450
pF
--
1400 2100
pF
-- 1.1 --
Ω
-- 345 450 nC
-- 32.5 --
nC
-- 49 -- nC
-- 16.5 --
nC
-- 74 -- nC
--
175 360
ns
-- 43 95 ns
--
130 275
ns
--
435 875
ns
--
290 590
ns
--
730 1470
ns
-- -- 1.25 V
-- -- 1.0 V
-- 59 -- ns
-- 77 -- nC
NOTES:
1: Pulse width limited by maximum junction temperature.
2: Starting TJ = 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V.
FDP8440 Rev. A6
2 www.fairchildsemi.com
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
100
VGS = 10.0 V
7.0 V
10
5.0 V
3.5 V
3.0 V
2.5 V
1
0.4
0.04
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
0.1
VDS,Drain-Source Voltage[V]
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.80
Figure 2. Transfer Characteristics
400
100
150oC
-55oC
10 25oC
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
1
0246
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1000
1.76
VGS = 4.5V
1.72
VGS = 10V
www.DataSheet14.U68.com
0
* Note : TJ = 25oC
50 100 150 200
ID, Drain Current [A]
250
Figure 5. Capacitance Characteristics
30000
24000
18000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
12000
6000
0
10-1
Coss
* Note:
1. VGS = 0V
2. f = 1MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
20
100 150oC
25oC
10
Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.3 0.6 0.9 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 25V
VDS = 20V
8 VDS = 15V
6
4
2
0 * Note : ID = 80A
0 100 200 300 400
Qg, Total Gate Charge [nC]
FDP8440 Rev. A6
3 www.fairchildsemi.com
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