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FDPF19N40 PDF даташит
| Спецификация FDPF19N40 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDPF19N40 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
9 Pages
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FDP19N40 / FDPF19N40
N-Channel MOSFET
400V, 19A, 0.24Ω
Features
• RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A
• Low Gate Charge ( Typ. 32nC)
• Low Crss ( Typ. 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
October
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP19N40 FDPF19N40
400
±30
19 19*
11.4 11.4*
76 76*
542
19
21.5
15
215 40
1.65 0.3
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP19N40
0.6
0.5
62.5
FDPF19N40
3.0
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP19N40 / FDPF19N40 Rev. A
1
www.fairchildsemi.com
No Preview Available ! |
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP19N40
Device
FDP19N40
Package
TO-220
Reel Size
-
Tape Width
-
FDPF19N40
FDPF19N40
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 400V, VGS = 0V
VDS = 320V, TC = 125oC
VGS = ±30V, VDS = 0V
400
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 9.5A
VDS = 20V, ID = 9.5A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 320V, ID = 19A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
www.DataSheet4U.com
Drain-Source Diode Characteristics
VDD = 200V, ID = 19A
RG = 25Ω
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 19A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 19A
dIF/dt = 100A/μs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 3mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 19A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4, 5)
-
-
-
-
(Note 4)
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.2
18.3
1590
255
20
32
10
13
31
70
82
49
-
-
-
349
3.56
Max. Units
-
-
1
10
±100
V
V/oC
μA
nA
5.0 V
0.24 Ω
-S
2115
340
29
40
-
-
pF
pF
pF
nC
nC
nC
72 ns
150 ns
174 ns
108 ns
19 A
76 A
1.4 V
- ns
- μC
FDP19N40 / FDPF19N40 Rev. A
2 www.fairchildsemi.com
No Preview Available ! |
Typical Performance Characteristics
Figure 1. On-Region Characteristics
40 VGS = 15.0V
10.0V
8.0 V
10 7.0 V
6.5 V
6.0 V
5.5 V
1
0.1
0.03
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.40
0.35
0.30
0.25
0.20
www.DataSheet4U.com
0.15
0
VGS = 10V
VGS = 20V
*Note: TJ = 25oC
10 20 30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
3500
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
2000
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
1500
Coss
1000
500
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
50
10 150oC
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
80
150oC
10 25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.2 0.6 1.0 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 200V
8 VDS = 320V
6
4
2
*Note: ID = 19A
0
0 5 10 15 20 25 30 35
Qg, Total Gate Charge [nC]
FDP19N40 / FDPF19N40 Rev. A
3 www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDPF19N40 | N-Channel MOSFET | Fairchild Semiconductor |
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