FDP15N40 PDF даташит

Спецификация FDP15N40 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDP15N40
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

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FDP15N40 / FDPF15N40

N-Channel MOSFET

400V, 15A, 0.3Ω

Features

• RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A

• Low Gate Charge ( Typ. 28nC)

• Low Crss ( Typ. 17pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• RoHS Compliant

October 2008

UniFETTM

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pluse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power

factor correction.

GDS

TO-220

FDP Series

GD S

TO-220F

FDPF Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol

VDSS

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IDM

EAS

IAR

EAR

dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(TC = 25oC)

- Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature

Thermal Characteristics

(Note 1)

(Note 2)

(Note 1)

(Note 3)

FDP15N40 FDPF15N40

400

±30

15 15*

9 9*

60 60*

731

170 40

1.45 0.3

-55 to +150

300

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

FDP15N40

0.7

0.5

62.5

FDPF15N40

3.0

62.5

Units

V/ns

W/oC

Units

oC/W

FDP15N40 / FDPF15N40 Rev. A

www.fairchildsemi.com

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Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking

FDP15N40

Device

FDP15N40

Package

TO-220

Reel Size

Tape Width

FDPF15N40

TO-220F

Quantity

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

ΔBVDSS

ΔTJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250μA, VGS = 0V, TJ = 25oC

ID = 250μA, Referenced to 25oC

VDS = 400V, VGS = 0V

VDS = 320V, TC = 125oC

VGS = ±30V, VDS = 0V

400

On Characteristics

VGS(th)

RDS(on)

gFS

Gate Threshold Voltage

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250μA

VGS = 10V, ID = 7.5A

VDS = 20V, ID = 7.5A

(Note 4)

3.0

Dynamic Characteristics

Ciss

Coss

Crss

Qg(tot)

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 320V, ID = 15A

VGS = 10V

(Note 4, 5)

Switching Characteristics

td(on)

Turn-On Delay Time

tr Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf Turn-Off Fall Time

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Drain-Source Diode Characteristics

VDD = 200V, ID = 15A

RG = 25Ω

IS Maximum Continuous Drain to Source Diode Forward Current

ISM Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 15A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V, ISD = 15A

dIF/dt = 100A/μs

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

2: L = 6.5mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3: ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5: Essentially Independent of Operating Temperature Typical Characteristics

(Note 4, 5)

(Note 4)

Typ.

0.5

0.24

15.3

1310

210

333

3.24

Max. Units

±100

V/oC

μA

5.0 V

0.3 Ω

-S

1750

280

62 ns

120 ns

154 ns

90 ns

15 A

60 A

1.4 V

- ns

- μC

FDP15N40 / FDPF15N40 Rev. A

2 www.fairchildsemi.com

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

40 VGS = 15.0V

10.0V

8.0 V

7.0 V

10 6.5 V

6.0 V

5.5 V

0.2

0.1

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

0.50

0.45

0.40

0.35

0.30

0.25

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0.20

VGS = 10V

VGS = 20V

*Note: TJ = 25oC

10 20 30

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

3000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

2000

*Note:

1. VGS = 0V

2. f = 1MHz

Ciss

1000

Coss

Crss

0.1 1 10

VDS, Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

150oC

-55oC

25oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

45678

VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

10 150oC

25oC

0.1

0.2

*Notes:

1. VGS = 0V

2. 250μs Pulse Test

0.4 0.6 0.8 1.0 1.2 1.3

VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

VDS = 100V

VDS = 200V

8 VDS = 320V

*Note: ID = 15A

0 5 10 15 20 25 30

Qg, Total Gate Charge [nC]

FDP15N40 / FDPF15N40 Rev. A

3 www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDP15N40	N-Channel MOSFET	Fairchild Semiconductor

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