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LMSB709LT1 PDF даташит
| Спецификация LMSB709LT1 изготовлена «Leshan Radio Company» и имеет функцию, называемую «PNP General Purpose Amplifier Transistor Surface Mount». |
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Детали детали
| Номер произв | LMSB709LT1 |
| Описание | PNP General Purpose Amplifier Transistor Surface Mount |
| Производители | Leshan Radio Company |
| логотип |  |
2 Pages
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LESHAN RADIO COMPANY, LTD.
PNP General Purpose Amplifier
Transistor Surface Mount
FEATURE
ƽSmall plastic SMD package.
ƽGeneral purpose amplification.
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMSB709LT1
AR 3000/Tape&Reel
LMSB709LT1G
AR
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS(T A = 25 °C)
Rating
Symbol Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Current - Peak
V (BR)CBO
V (BR)CEO
V (BR)EBO
IC
I C(P)
–60
–45
–7.0
–100
–200
Vdc
Vdc
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
P D 200 mW
T J 150 °C
T stg –55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Characteristic
Symbol
Collector-Emitter Breakdown Voltage (IC=–2.0mAdc,IB=0)
www.DataSheetC4Uol.lceocmtor-Base Breakdown Voltage (IC=–10µAdc,IE=0)
Emitter-Base Breakdown Voltage (IE =–10µAdc,IE=0)
Collector-Base Cutoff Current (VCB =–45Vdc, IE=0)
Collector-Emitter Cutoff Current (VCE=–10Vdc, IB=0)
DC Current Gain (1)
(VCE=–10Vdc, IC = –2.0mAdc)
Collector-Emitter Saturation Voltage
(IC = –100mAdc, IB=–10mAdc)
V (BR)CEO
V(BR)CBO
V (BR)EBO
ICBO
ICEO
hFE1
VCE(sat)
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
DEVICE MARKING
Min
–45
–60
–7.0
—
—
210
—
LMSB709LT1
3
2
1
SOT-23
COLLECTOR
3
2
BASE
1
EMITTER
Max
—
—
—
–0.1
–100
340
–0.5
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
—
Vdc
Marking Symbol
ARX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
LMSB709LT1-1/2
No Preview Available ! |
LESHAN RADIO COMPANY, LTD.
LMSB709LT1
A
L
3
BS
12
VG
C
D
H
K
SOT-23
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
www.DataSheet4U.com
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
LMSB709LT1-2/2
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| Номер в каталоге | Описание | Производители |
| LMSB709LT1 | PNP General Purpose Amplifier Transistor Surface Mount | Leshan Radio Company |
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|
DataSheet26.com | 2020 | Контакты | Поиск |