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K3435 PDF даташит
| Спецификация K3435 изготовлена «NEC» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK3435». |
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Детали детали
| Номер произв | K3435 |
| Описание | MOSFET ( Transistor ) - 2SK3435 |
| Производители | NEC |
| логотип |  |
4 Pages
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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A)
5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A)
5 • Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3435
2SK3435-S
TO-220AB
TO-262
2SK3435-Z
TO-220SMD
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
60
±20
±80
±320
84
Total Power Dissipation (TA = 25°C) PT 1.5
Channel Temperature
Tch 150
Storage Temperature
5 Single Avalanche Current Note2
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5 Single Avalanche Energy Note2
Tstg –55 to +150
IAS 31
EAS 96
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-220SMD)
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.49 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14604EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000
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2SK3435
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
5
RDS(on)1
RDS(on)2
VGS = 10 V, ID = 40 A
VGS = 4.0 V, ID = 40 A
Gate to Source Cut-off Voltage
5 Forward Transfer Admittance
VGS(off)
| yfs |
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 40 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
5 Input Capacitance
IGSS VGS = ±20 V, VDS = 0V
Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
5 Rise Time
td(on)
tr
ID = 40 A, VGS(on) = 10 V, VDD = 30 V,
RG = 10 Ω
Turn-off Delay Time
td(off)
Fall Time
5 Total Gate Charge
5 Gate to Source Charge
5 Gate to Drain Charge
tf
QG
QGS
QGD
ID = 80 A , VDD = 48 V, VGS = 10 V
Body Diode Forward Voltage
5 Reverse Recovery Time
5 Reverse Recovery Charge
VF(S-D)
trr
Qrr
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
11 14 mΩ
16 22 mΩ
1.5 2.0 2.5 V
21 43
S
10 µA
±10 µA
3200
pF
520 pF
260 pF
80 ns
1200
ns
200 ns
350 ns
60 nC
10 nC
16 nC
1.0 V
46 ns
66 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
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VGS = 20 → 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
RL VGS
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
2 Preliminary Data Sheet D14604EJ1V0DS00
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PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
2SK3435
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4.8 MAX.
(10) 1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-220SMD (MP-25Z)
(10)
4
4.8 MAX.
1.3±0.2
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1.4±0.2
1.0±0.3
(0.5R(0).8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14604EJ1V0DS00
3
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