OMD200 PDF даташит

Спецификация OMD200 изготовлена «Omnirel» и имеет функцию, называемую «(OMD100 - OMD500) FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE».

Детали детали

Номер произв	OMD200
Описание	(OMD100 - OMD500) FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE
Производители	Omnirel
логотип

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OMD100 OMD400

OMD200 OMD500

FOUR N-CHANNEL MOSFETS IN HERMETIC

POWER PACKAGE

100V Thru 500V, Up To 25 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

• Isolated Hermetic Metal Package

• Fast Switching

• Low RDS(on)

• Available Screened To MIL-S-19500, TX, TXV and S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits.

MAXIMUM RATINGS PER TRANSISTOR @ 25°C

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PART NUMBER

OMD100

OMD200

OMD400

OMD500

VDS

100V

200V

400V

500V

RDS(on)

.08

.11

.35

.43

25A

13A

11A

3.1

SCHEMATIC

CONNECTION DIAGRAM

FET 4

FET 3

GS D GS D

DSG GS D

FET 1

FET 3

.260

1.000

SQ.

.187

TYP.

1.520

45°

REF

.150

.500

MIN.

.170 R.

TYP.

.156 DIA.

TYP.

.040 LEAD

DIA.

.625

.125

(10 PLCS)

.050

.270

4 11 R2

Supersedes 1 07 R1

3.1 - 1

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ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OMD100 (100V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

Drain-Source Breakdown

Voltage

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

100 V VGS = 0,

ID = 250 mA

2.0 4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = +20 V

- 100 nA VGS = -20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

35 A VDS 2 VDS(on), VGS = 10 V

1.1 1.60 V VGS = 10 V, ID = 20 A

RDS(on) Static Drain-Source On-State

Resistance1

.065 .080

VGS = 10 V, ID = 20 A

RDS(on) Static Drain-Source On-State

Resistance1

.10 .160

VGS = 10 V, ID = 20 A,

TC = 125 C

DYNAMIC

gfs Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr Rise Time

td(off) Turn-Off Delay Time

tf Fall Time

9.0 10

2700

1300

470

100

S(W )

VDS 2 VDS(on), ID = 20 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 30 V, ID @ 20 A

ns Rg = 5.0 W , VG = 10V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS Continuous Source Current

(Body Diode)

ISM Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr Reverse Recovery Time

- 40 A

- 160 A

- 2.5 V

400 ns

Modified MOSPOWER

symbol showing

the integral P-N

Junction rectifier.

TC = 25 C, IS = -40 A, VGS = 0

TJ = 150 C, IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OMD200 (200V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

Drain-Source Breakdown

Voltage

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

200 V VGS = 0,

ID = 250 mA

2.0 4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = + 20 V

-100 nA VGS = - 20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

30 A VDS 2 VDS(on), VGS = 10 V

1.36 1.76 V VGS = 10 V, ID = 16 A

RDS(on) Static Drain-Source On-State

Resistance1

.085 .110

VGS = 10 V, ID = 16 A

RDS(on) Static Drain-Source On-State

Resistance1

0.14 .200

VGS = 10 V, ID = 16 A,

TC = 125 C

DYNAMIC

gfs Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr Rise Time

td(off) Turn-Off Delay Time

tf Fall Time

10.0 12.5

2400

600

250

S(W )

VDS 2 VDS(on), ID = 16 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 75 V, ID @ 16 A

ns Rg = 5.0 W ,VGS = 10V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS Continuous Source Current

(Body Diode)

ISM Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr Reverse Recovery Time

- 30 A

- 120 A

-2 V

350 ns

Modified MOSPOWER

symbol showing

the integral P-N

Junction rectifier.

TC = 25 C, IS = -30 A, VGS = 0

TJ = 150 C, IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OMD400 (400V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

Drain-Source Breakdown

Voltage

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

400 V VGS = 0,

ID = 250 mA

2.0 4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = +20 V

- 100 nA VGS = - 20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

15 A VDS 2 VDS(on), VGS = 10 V

2.0 2.8 V VGS = 10 V, ID = 8.0 A

RDS(on) Static Drain-Source On-State

Resistance1

0.30 .35

VGS = 10 V, ID = 8.0 A

RDS(on) Static Drain-Source On-State

Resistance1

.60 .70

VGS = 10 V, ID = 8.0 A,

TC = 125 C

DYNAMIC

gfs Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr Rise Time

td(off) Turn-Off Delay Time

tf Fall Time

6.0 9.6

2900

450

150

S(W )

VDS 2 VDS(on), ID = 8.0 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 200 V, ID @ 8.0 A

ns Rg =5.0 W , VGS =10V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS Continuous Source Current

(Body Diode)

ISM Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr Reverse Recovery Time

Modified MOSPOWER

- 15 A

symbol showing

the integral P-N G

- 60 A

Junction rectifier.

- 1.6 V TC = 25 C, IS = -15 A, VGS = 0

600 ns TJ = 100 C, IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OMD500 (500V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

Drain-Source Breakdown

Voltage

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

500 V VGS = 0,

ID = 250 mA

2.0 4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = +20 V

- 100 nA VGS = - 20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

13 A VDS 2 VDS(on), VGS = 10 V

2.1 3.0 V VGS = 10 V, ID = 7.0 A

RDS(on) Static Drain-Source On-State

Resistance1

0.35 0.43

VGS = 10 V, ID = 7.0 A

RDS(on) Static Drain-Source On-State

Resistance1

0.66 0.88

VGS = 10 V, ID = 7.0 A,

TC = 125 C

DYNAMIC

gfs Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr Rise Time

td(off) Turn-Off Delay Time

tf Fall Time

6.0 7.2

2600

280

S(W )

VDS 2 VDS(on), ID = 7.0 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 210 V, ID @ 7.0 A

ns Rg = 5.0 W , VGS = 10 V

ns (MOSFET switching times are

essentially independent of

ns operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS Continuous Source Current

(Body Diode)

ISM Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr Reverse Recovery Time

Modified MOSPOWER

- 13 A

symbol showing

the integral P-N G

- 52 A

Junction rectifier.

- 1.4 V TC = 25 C, IS = -13 A, VGS = 0

700 ns TJ = 150 C, IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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Номер в каталоге	Описание	Производители
OMD200	(OMD100 - OMD500) FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE	Omnirel

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