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STP3481 PDF даташит
| Спецификация STP3481 изготовлена «Stanson Technology» и имеет функцию, называемую «P Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | STP3481 |
| Описание | P Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
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STP3481
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
The STP3481 is the P-Channel logic enhancement mode power field effect transistors
are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6P
FEATURE
z -30V/-5.2A, RDS(ON) = 55m-ohm
@VGS = -10V
z -30V/-4.2A, RDS(ON) = 75m-ohm
@VGS = -4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z TSOP-6P package design
1.2.5.6.Drain 3.Gate 4.Source
PART MARKING
TSOP-6P
www.DataSheet4U.com
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
STP3481S6RG
TSOP-6P
※ Process Code : A ~ Z ; a ~ z
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Part Marking
81YA
STP3481 2006. V1
No Preview Available ! |
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
※ STP3481S6RG S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
-30
±20
-5.2
-4.2
-20
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
IS
PD
TJ
-1.7
2.0
1.3
150
Storgae Temperature Range
TSTG
-55/150
www.DataSheeTt4hUe.crommal Resistance-Junction to Ambient
RθJA
90
Unit
V
V
A
A
A
W
℃
℃
℃/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
No Preview Available ! |
STP3481
P Channel Enhancement Mode MOSFET
-5.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
V(BR)DSS VGS=0V,ID=-250uA -30
V
VGS(th) VDS=VGS,ID=-250uA -1.0
-3.0 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±20V
±100 Na
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55℃
-1
-10 UA
VDS≦-5V,VGS=-10V
VGS=-10.0V,ID=-5.2A
VGS=-4.5V,ID=-4.2A
VDS=-5.0V,ID=-4.0A
-10
0.041 0.055
0.058 0.075
10
A
Ω
S
Diode Forward Voltage
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Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
VSD IS=-1.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V
VGS=-10V
ID≣-4.0A
VDS=-15V
VGS=0V
F=1MHz
VDD=-15V
RL=15Ω
ID=-1.0A
VGEN=-10V
RG=6Ω
-0.8 -1.2 V
14 21
1.9
3.7
540
131
105
10 16
15 25
32 50
21 32
nC
pF
nS
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
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| Номер в каталоге | Описание | Производители |
| STP3481 | P Channel Enhancement Mode MOSFET | Stanson Technology |
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|
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