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ST3407 PDF даташит
| Спецификация ST3407 изготовлена «Stanson Technology» и имеет функцию, называемую «P Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | ST3407 |
| Описание | P Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
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ST3407
P Channel Enhancement Mode MOSFET
-3.6A
DESCRIPTION
ST3407 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
S
2
FEATURE
� -30V/-4.0A, RDS(ON) = 60mΩ
@VGS = -10V
� -30V/-3.2A, RDS(ON) = 80mΩ
@VGS = -4.5V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
A7YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3407S23RG
SOT-23-3L
A7YA
※ Process Code : A ~ Z ; a ~ z
※ ST3407S23RG S 23: SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1
No Preview Available ! |
www.DataSheet4U.com
ST3407
P Channel Enhancement Mode MOSFET
-3.6A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
-30
±20
-3.6
-3.0
-15
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
IS
PD
TJ
TSTG
RθJA
-1.0
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1
No Preview Available ! |
www.DataSheet4U.com
ST3407
P Channel Enhancement Mode MOSFET
-3.6A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=-250uA -30
V
VGS(th) VDS=VGS,ID=-250uA -1.0
-3.0 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-10V
VGS=-10.0V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
VDS=-5.0V,ID=-4.0A
-10
±100
-1
-9.5
45 60
60 80
10
nA
uA
A
mΩ
S
VSD IS=-1.0A,VGS=0V
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V
VGS=-10V
ID≡-4.0A
VDS=-15V
VGS=0V
F=1MHz
VDD=-15V
RL=15Ω
ID=-1.0A
VGEN=-10V
RG=6Ω
14 21
1.9
3.7
540
131
105
10 16
16 25
32 50
21 32
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3407 2006. V1
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