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ST3406 PDF даташит
| Спецификация ST3406 изготовлена «Stanson Technology» и имеет функцию, называемую «N Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | ST3406 |
| Описание | N Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
No Preview Available ! |
ST3406
N Channel Enhancement Mode MOSFET
5.4A
DESCRIPTION
ST3406 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
S
2
FEATURE
z 30V/5.4A, RDS(ON) = 26mΩ(Typ.)
@VGS = 10V
z 30V/4.6A, RDS(ON) = 36mΩ
@VGS = 4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
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3
A6YA
12
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3406S23RG
SOT-23-3L
A6YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
No Preview Available ! |
ST3406
N Channel Enhancement Mode MOSFET
5.4A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
30
±20
5.4
3.2
25
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
IS
PD
TJ
1.7
2.0
1.3
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
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RθJA
90
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
No Preview Available ! |
ST3406
N Channel Enhancement Mode MOSFET
5.4A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance
RDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
Dynamic
Total Gate Charge
www.DataShGeeat4tUe.-coSmource Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Turn-Off Time
td(off)
tf
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=55℃
VDS≧5V,VGS=4.5V
VGS=10V,ID=4.0A
VGS=4.5V,ID=3.6A
VDS=4.5V,ID=5.4A
IS=1.7A,VGS=0V
VDS=15V
VGS=10V
ID≣6.7A
VDS=15V
VGS=0V
F=1MHz
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
30 V
1.0 3.0 V
±100
1
nA
10 uA
10 A
26
36
33
41
mΩ
12 S
0.8 1.2 V
10 18
1.6
3.1
450
240
38
7 15
10 20
20 40
11 20
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
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