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ST3402 PDF даташит
| Спецификация ST3402 изготовлена «Stanson Technology» и имеет функцию, называемую «N Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | ST3402 |
| Описание | N Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
No Preview Available ! |
ST3402
N Channel Enhancement Mode MOSFET
4A
DESCRIPTION
ST3402 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
GS
12
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
z 30V/2.8A, RDS(ON) = 58mΩ
@VGS = 10V
z 30V/2.3A, RDS(ON) = 65mΩ
@VGS = 4.5V
z 30V/1.5A, RDS(ON) = 105mΩ
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
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3
A2YA
12
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3402S23RG
SOT-23-3L
A2YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3402S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3402 2006. V1
No Preview Available ! |
ST3402
N Channel Enhancement Mode MOSFET
4A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
30
±12
4.0
2.8
10
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
IS
PD
TJ
1.25
1.25
0.8
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
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RθJA
100
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3402 2006. V1
No Preview Available ! |
ST3402
N Channel Enhancement Mode MOSFET
4A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
www.DataSThoeetta4Ul .Gcoamte Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=-250uA 30
V
VGS(th) VDS=VGS,ID=250uA 0.8
1.6 V
IGSS
VDS=0V,VGS=±12V
±100 nA
IDSS
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=55℃
1
10 uA
ID(on)
VDS≧4.5V,VGS=4.5V 4
A
RDS(on)
VGS=10V,ID=2.8A
VGS=4.5V,ID=4.5A
VGS=2.5V,ID=1.5A
48 58
53 65
80 105
mΩ
gfs VDS=4.5V,ID=5.8A
12
S
VSD IS=1.25A,VGS=0V
0.8 1.2
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V
VGS=4.5V
ID≣2.0A
VDS=15V
VGS=0V
F=1MHz
VDD=15V
RL=10Ω
ID=1.0A
VGEN=10V
RG=3Ω
4.2 6
0.6
1.5
350
55
41
2.5
2.5
20
4
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3402 2006. V1
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