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ST3401 PDF даташит
| Спецификация ST3401 изготовлена «Stanson Technology» и имеет функцию, называемую «P Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | ST3401 |
| Описание | P Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
No Preview Available ! |
ST3401
P Channel Enhancement Mode MOSFET
-4.0A
DESCRIPTION
ST3401 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
3
D
GS
12
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
z -30V/-4.0A, RDS(ON) = 45mΩ (Typ.)
@VGS = -10V
z -30V/-3.2A, RDS(ON) = 50mΩ
@VGS = -4.5V
z -30V/-1.2A, RDS(ON) = 60mΩ
@VGS = -2.5V
z Super high density cell design for
Extremely low RDS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOT-23-3L package design
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3
A1YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3401S23RG
SOT-23-3L
A1YA
※ Process Code : A ~ Z ; a ~ z
※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401 2005. V1
No Preview Available ! |
ST3401
P Channel Enhancement Mode MOSFET
-4.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
-30
±12
-4.0
-3.2
-15
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
IS
PD
TJ
-1.0
1.25
0.8
150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
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RθJA
120
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401 2005. V1
No Preview Available ! |
ST3401
P Channel Enhancement Mode MOSFET
-4.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
www.DataTSohteaetl4UG.caotme Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min Typ Max Unit
V(BR)DSS VGS=0V,ID=-250uA -30
V
VGS(th) VDS=VGS,ID=-250uA -0.4
-1.0 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±12V
±100 nA
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55℃
-1
-10 uA
VDS≦-5V,VGS=-4.5V -10
VGS=-10V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
VGS=-2.5V,ID=-1.2A
45
50
60
VDS=-5V,ID=-4.0V
10
A
mΩ
S
VSD IS=-1.0A,VGS=0V
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V
VGS=-10V
ID≣-4.0A
VDS=-15V
VGS=0V
F=1MHz
VDS=-15V
VGS=-15V
ID=-1A
RL=6Ω
RG=-10Ω
14 21
1.9
3.7
540
131
105
10 15
15 25
31 50
20 30
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3401 2005. V1
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