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ST3400 PDF даташит
| Спецификация ST3400 изготовлена «Stanson Technology» и имеет функцию, называемую «N Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | ST3400 |
| Описание | N Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
No Preview Available ! |
ST3400
N Channel Enhancement Mode MOSFET
5.8A
DESCRIPTION
The ST3400 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching.
PIN CONFIGURATION
SOT-23-3L
3
D
GS
12
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
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3
FEATURE
z 30V/5.8A, RDS(ON) = 28mΩ (Typ.)
@VGS = 10V
z 30V/4.8A, RDS(ON) = 33mΩ
@VGS = 4.5V
z 30V/4.0A, RDS(ON) = 40mΩ
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
A0YA
12
Y: Year Code A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3400S23RG
SOT-23-3L
A0YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3400S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
No Preview Available ! |
ST3400
N Channel Enhancement Mode MOSFET
5.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
30
±12
5.8
3.5
25
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
IS
PD
TJ
1.7
2.0
1.3
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
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RθJA
90
Unit
V
V
A
A
A
W
℃
℃
℃/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
No Preview Available ! |
ST3400
N Channel Enhancement Mode MOSFET
5.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
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Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=55℃
VDS≧5V,VGS=4.5V
VGS=10V,ID=5.8A
VGS=4.5V,ID=4.8A
VGS=2.5V,ID=4.0A
VDS=4.5V,ID=5.8A
IS=1.7A,VGS=0V
30
0.8 1.6
±100
1
10
10
28
33
40
12
0.8 1.2
V
V
nA
uA
A
mΩ
S
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V
VGS=10V
ID≣6.7A
VDS=15V
VGS=0V
F=1MHz
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
9.7 18
1.6
3.1
450
240
38
7 15
10 20
20 40
11 20
nC
pF
nS
3
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
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| Номер в каталоге | Описание | Производители |
| ST3400 | N Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3401 | P Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3402 | N Channel Enhancement Mode MOSFET | Stanson Technology |
| ST3403 | P Channel Enchancement Mode MOSFET | Stanson Technology |
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