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ST2305A PDF даташит
| Спецификация ST2305A изготовлена «Stanson Technology» и имеет функцию, называемую «P Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | ST2305A |
| Описание | P Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
No Preview Available ! |
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST2305A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
GS
12
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
z -15V/-3.5A, RDS(ON) = 45m-ohm (Typ.)
@VGS = -4.5V
z -15V/-3.0A, RDS(ON) = 55m-ohm
@VGS = -2.5V
z -15V/-2.0A, RDS(ON)= 90m-ohm
@VGS=-1.8V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
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3
05YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2305AS23RG
SOT-23-3L
05YA
※ Process Code : A ~ Z ; a ~ z
※ ST2305AS23RG S : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
No Preview Available ! |
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
VDSS
VGSS
ID
IDM
-15
±12
-3.5
-2.8
-10
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
IS
PD
TJ
-1.6
1.25
0.8
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
120
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Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
No Preview Available ! |
ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
V(BR)DSS VGS=0V,ID=-250uA -15
V
VGS(th) VDS=VGS,ID=-250uA -0.3
-1.5 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-2.0A
VDS=-5V,ID=-3.5V
±100 nA
-1
-10 uA
-6
-3
0.045
0.055
0.09
8.5
A
Ω
S
Diode Forward Voltage
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Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
VSD IS=-1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V
VGS=-4.5V
ID≣-3.5A
VDS=-10V
VGS=0V
F=1MHz
VDD=-10V
RL=6Ω
ID=-1.0A
VGEN=-4.5V
RG=6Ω
-0.8 -1.2 V
10 12
2
2
485
90
40
10 18
13 22
18 24
15 20
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
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| Номер в каталоге | Описание | Производители |
| ST2305 | P Channel Enchancement Mode MOSFET | Stanson Technology |
| ST2305A | P Channel Enhancement Mode MOSFET | Stanson Technology |
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