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ST2301A PDF даташит
| Спецификация ST2301A изготовлена «Stanson Technology» и имеет функцию, называемую «P Channel Enhancement Mode MOSFET». |
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Детали детали
| Номер произв | ST2301A |
| Описание | P Channel Enhancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
6 Pages
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ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
DESCRIPTION
ST2301A is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone and notebook computer power management,
other battery powered circuits, and low in-line power loss are required. The product is in
a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
GS
12
FEATURE
z -20V/-2.8A, RDS(ON) = 80mΩ (Typ.)
@VGS = -4.5V
z -20V/-2.0A, RDS(ON) = 120mΩ
@VGS = -2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
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3
S01YA
12
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
ST2301SRG
SOT-23
※ Process Code ∶ A ~ Z ; a ~ z
※ ST2301SRG ∶ S : SOT23 R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Part Marking
S01YA
ST2301A 2005. V1
No Preview Available ! |
ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
VDSS
VGSS
ID
IDM
-20
±12
-3.0
-2.0
-10
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
IS
PD
TJ
-1.6
1.25
0.8
150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
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RθJA
120
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301A 2005. V1
No Preview Available ! |
ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
www.DataSGheaette4U-S.coomurce Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Turn-Off Time
td(off)
tf
VGS=0V,ID=-250uA -20
V
VDS=VGS,ID=-250uA -0.45
-1.5 V
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VDS≦-5V,VGS=-2.5V
VGS=-2.5V,ID=-2.0A
VGS=-4.5V,ID=-2.8A
VDS=-5V,ID=-2.8V
±100 nA
-1
-10 uA
-6
-3
0.080
0.120
6.5
A
Ω
S
IS=-1.6A,VGS=0V
-0.8 -1.2 V
VDS=-6V
VGS=-4.5V
ID≣-2.8A
VDS=-6V
VGS=0V
F=1MHz
VDD=-6V
RL=6Ω
ID=-1A
VGEN=-4.5V
RG=6Ω
5.8 10
0.85
1.7
nC
415
223
pF
87
13 25
36 60 nS
42 70
34 60
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301A 2005. V1
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| Номер в каталоге | Описание | Производители |
| ST2301 | P Channel Enchancement Mode MOSFET | Stanson Technology |
| ST2301A | P Channel Enhancement Mode MOSFET | Stanson Technology |
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