FDMS7692 PDF даташит

Спецификация FDMS7692 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDMS7692
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

7 Pages

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August 2011

FDMS7692

N-Channel PowerTrench® MOSFET

30 V, 7.5 mΩ

Features

Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A

Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A

Advanced Package and Silicon combination for low rDS(on)

and high efficiency

Next generation enhanced body diode technology, engineered

for soft recovery.

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been optimized

for low gate charge, low rDS(on), fast switching speed and body

diode reverse recovery performance.

Applications

IMVP Vcore Switching for Notebook

VRM Vcore Switching for Desktop and Server

OringFET / Load Switch

DC-DC Conversion

Top Bottom

Pin 1

Power 56

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol

VDS

VGS

EAS

TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

-Pulsed

TC = 25 °C

TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

(Note 1a)

(Note 3)

(Note 1a)

Ratings

±20

2.5

-55 to +150

Units

°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

(Note 1a)

4.6

°C/W

Device Marking

FDMS7692

Device

FDMS7692

Package

Power 56

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMS7692 Rev.D1

www.fairchildsemi.com

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Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

ΔBVDSS

ΔTJ

IDSS

IGSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current, Forward

ID = 250 μA, VGS = 0 V

ID = 250 μA, referenced to 25 °C

VDS = 24 V, VGS = 0 V

VGS = 20 V, VDS = 0 V

13 mV/°C

1 μA

100 nA

On Characteristics

VGS(th)

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS Forward Transconductance

VGS = VDS, ID = 250 μA

1.2 2.0 3.0

ID = 250 μA, referenced to 25 °C

-6 mV/°C

VGS = 10 V, ID = 13 A

VGS = 4.5 V, ID = 10 A

VGS = 10 V, ID = 13 A, TJ = 125 °C

VDS = 5 V, ID = 13 A

6.5 7.5

9.5 13 mΩ

9.0 11

68 S

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = 15 V, VGS = 0 V,

f = 1 MHz

1015

325

1.0

1350

435

2.0

Switching Characteristics

td(on)

td(off)

Qgs

Qgd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = 15 V, ID = 13 A,

VGS = 10 V, RGEN = 6 Ω

VGS = 0 V to 10 V

VGS = 0 V to 4.5 V VDD = 15 V,

ID = 13 A

8 16 ns

2.7 10

17 31 ns

2.3 10

15 22 nC

7 10 nC

3.4 nC

1.9 nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2.1 A

VGS = 0 V, IS = 13 A

(Note 2)

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 13 A, di/dt = 100 A/μs

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 13 A, di/dt = 300 A/μs

0.75

0.84

1.1

1.2

Notes:

1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

a. 50 °C/W when mounted on a

1 in2 pad of 2 oz copper.

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.

FDMS7692 Rev.D1

www.fairchildsemi.com

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Typical Characteristics TJ = 25 °C unless otherwise noted

40 VGS = 10 V

VGS = 4.5 V

VGS = 4.0 V

30 VGS = 3.5 V

0.0

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = 3.0 V

0.5 1.0 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

2.0

Figure 1. On Region Characteristics

8 VGS = 3.0 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4.0 V

VGS = 4. 5 V

VGS = 10 V

0 10 20 30 40 50

ID, DRAIN CURRENT (A)

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6

1.5 ID = 13 A

VGS = 10 V

1.4

1.3

1.2

1.1

1.0

0.9

0.8

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. Normalized On Resistance

vs Junction Temperature

ID = 13 A

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = 125 oC

TJ = 25 oC

468

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VDS = 5 V

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

234

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

100

VGS = 0 V

TJ = 150 oC

TJ = 25 oC

0.1

TJ = -55 oC

0.01

0.2

0.4 0.6 0.8 1.0

VSD, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDMS7692 Rev.D1

www.fairchildsemi.com

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