FDMS7672AS PDF даташит

Спецификация FDMS7672AS изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDMS7672AS
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

8 Pages

No Preview Available !

September 2009

FDMS7672AS

N-Channel PowerTrench® SyncFETTM

30 V, 42 A, 4 mΩ

Features

General Description

Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A

Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A

Advanced Package and Silicon combination for low rDS(on)

and high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

The FDMS7672AS has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

rDS(on) while maintaining excellent switching performance. This

device has the added benefit of an efficient monolithic Schottky

body diode.

Applications

100% UIL tested

Synchronous Rectifier for DC/DC Converters

RoHS Compliant

Notebook Vcore/ GPU low side switch

Networking Point of Load low side switch

Telecom secondary side rectification

Top

Bottom

Pin 1

S D5

SG D 6

Power 56

DDDD

MOSFET

www.DataSheet4U.com

Maximum

Ratings

°C

unless

otherwise

noted

Symbol

VDS

VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

-Pulsed

TC = 25 °C

TA = 25 °C

dv/dt

MOSFET dv/dt

EAS

TJ, TSTG

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

(Note 4)

(Note 1a)

(Note 3)

(Note 1a)

Ratings

±20

2.6

2.5

-55 to +150

Units

V/ns

°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

(Note 1a)

2.7

°C/W

Device Marking

FDMS7672AS

Device

FDMS7672AS

Package

Power 56

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMS7672AS Rev.C

www.fairchildsemi.com

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

∆BVDSS

∆TJ

IDSS

IGSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current, Forward

ID = 1 mA, VGS = 0 V

ID = 10 mA, referenced to 25 °C

VDS = 24 V, VGS = 0 V

VGS = 20 V, VDS = 0 V

18 mV/°C

500 µA

100 nA

On Characteristics (Note 2)

VGS(th)

∆VGS(th)

∆TJ

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS Forward Transconductance

VGS = VDS, ID = 1 mA

1.2 1.9 3.0

ID = 10 mA, referenced to 25 °C

-5 mV/°C

VGS = 10 V, ID = 18 A

VGS = 7 V, ID = 16 A

VGS = 4.5 V, ID = 14 A

VGS = 10 V, ID = 18 A, TJ = 125 °C

VDS = 5 V, ID = 18 A

3.2 4.0

3.5

4.3

4.5

5.2

mΩ

4.1 5.2

97 S

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = 15 V, VGS = 0 V,

f = 1 MHz

2120

735

1.1

2820

975

135

2.2

Ω

Switching Characteristics

td(on)

Turn-On Delay Time

tr Rise Time

td(off)

Turn-Off Delay Time

tf Fall Time

Qg Total Gate Charge

Qgs Gate to Source Gate Charge

Qgd Gate to Drain “Miller” Charge

www.DataSheet4U.com

Drain-Source Diode Characteristics

VDD = 15 V, ID = 18 A,

VGS = 10 V, RGEN = 6 Ω

VGS = 0 V to 10 V

VGS = 0 V to 4.5 V VDD = 15 V,

ID = 18 A

12 21 ns

5 10 ns

28 44 ns

4 10 ns

33 46 nC

15 22 nC

6.5 nC

4.0 nC

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2 A

VGS = 0 V, IS = 18 A

(Note 2)

0.48 0.9

0.80 1.3

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 18 A, di/dt = 300 A/µs

26 42 ns

26 42 nC

Notes:

1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

a. 50 °C/W when mounted on a

1 in2 pad of 2 oz copper.

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMS7672AS Rev.C

www.fairchildsemi.com

No Preview Available !

Typical Characteristics TJ = 25 °C unless otherwise noted

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

60 VGS = 10 V

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

VGS = 3 V

0.0 0.5 1.0 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

2.0

VGS = 3 V

VGS = 3.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

4 VGS = 10 V

VGS = 4 V VGS = 4.5 V

0 30 60

ID, DRAIN CURRENT (A)

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.5

1.4

ID = 18 A

VGS = 10 V

1.3

1.2

1.1

1.0

0.9

0.8

0.7

-75

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. Normalized On- Resistance

vs Junction Temperature

www.DataSheet4U.com

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

60 VDS = 5 V

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

ID = 18 A

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

TJ = 125 oC

2 TJ = 25 oC

2468

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

100

VGS = 0 V

TJ = 125 oC

0.1 TJ = 25 oC

0.01

TJ = -55 oC

0.001

0.0

0.2 0.4 0.6 0.8 1.0

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

1.2

FDMS7672AS Rev.C

3 www.fairchildsemi.com

Скачать PDF:

[ FDMS7672AS.PDF Даташит ]

Номер в каталоге	Описание	Производители
FDMS7672AS	N-Channel MOSFET	Fairchild Semiconductor

Номер в каталоге	Описание	Производители
TL431	100 мА, регулируемый прецизионный шунтирующий регулятор	Unisonic Technologies
IRF840	8 А, 500 В, N-канальный МОП-транзистор	Vishay
LM317	Линейный стабилизатор напряжения, 1,5 А	STMicroelectronics

DataSheet26.com | 2020 |

Контакты | Поиск