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FDMS7670 PDF даташит
| Спецификация FDMS7670 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDMS7670 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
No Preview Available ! |
April 2009
FDMS7670
N-Channel PowerTrench® MOSFET
30 V, 3.8 mΩ
Features
Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17 A
Advanced Package and Silicon design for low rDS(on) and high
efficiency
Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
www.DataSMheeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
105
21
150
144
62
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.0
50
°C/W
Device Marking
FDMS7670
Device
FDMS7670
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7670 Rev.D
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
15 mV/°C
1 µA
100 nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 17 A
VGS = 10 V, ID = 21 A, TJ = 125 °C
VDS = 5 V, ID = 21 A
1.25
1.9
-7
2.9
4.1
4.0
136
3.0 V
mV/°C
3.8
5.0 mΩ
5.3
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
3085
990
75
1.2
4105
1315
115
2.5
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 21 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 21 A
15 26 ns
6 12 ns
31 50 ns
5 10 ns
40 56 nC
17 24 nC
9.8 nC
4.4 nC
Drain-Source Diode Characteristics
www.DataShVeSeDt4U.com Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 21 A
(Note 2)
(Note 2)
0.7 0.95
0.8 1.1
V
trr Reverse Recovery Time
38 61 ns
Qrr Reverse Recovery Charge
19 34 nC
ta Reverse Recovery Fall Time
IF = 21 A, di/dt = 100 A/µs
14 ns
tb Reverse Recovery Rise Time
24 ns
S Softness (tb/ta)
1.7
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 21 A, di/dt = 300 A/µs
32 51 ns
34 54 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 22 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7670 Rev.D
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
150
VGS = 10 V
120
VGS = 5 V
VGS = 4.5 V
VGS = 4 V
90
60
30
0
0.0
VGS = 3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
5
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
VGS = 4 V
3
2 VGS = 4.5 V
1
VGS = 5 V
VGS = 10 V
0
0 30 60 90 120 150
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 21 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
15
ID = 21 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
12
9
6
TJ = 125 oC
3
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
150
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
120
VDS = 5 V
90
TJ = 150 oC
60
30
0
1
TJ = 25 oC
TJ = -55 oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
500
100 VGS = 0 V
10
1
0.1
0.01
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS7670 Rev.D
3 www.fairchildsemi.com
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