|
FDMS7658AS PDF даташит
| Спецификация FDMS7658AS изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
|
|
Детали детали
| Номер произв | FDMS7658AS |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
September 2009
FDMS7658AS
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 1.9 mΩ
Features
General Description
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
Max rDS(on) = 2.2 mΩ at VGS = 7 V, ID = 26 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
The FDMS7658AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
100% UIL tested
Synchronous Rectifier for DC/DC Converters
RoHS Compliant
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top
Bottom
Pin 1
S D5
4G
S
SG D 6
3S
Power 56
DDDD
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
dv/dt
MOSFET dv/dt
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
177
29
150
1.5
162
89
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.4
50
°C/W
Device Marking
FDMS7658AS
Device
FDMS7658AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7658AS Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
23 mV/°C
500 µA
100 nA
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.7 3.0
V
ID = 10 mA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 28 A
VGS = 7 V, ID = 26 A
VGS = 4.5 V, ID = 23 A
VGS = 10 V, ID = 28 A, TJ = 125 °C
VDS = 5 V, ID = 28 A
1.5 1.9
1.7
1.9
2.2
2.4
mΩ
2.0 2.6
181 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
5525
2020
150
0.4
7350
2685
230
0.9
pF
pF
pF
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
www.DataShDereat4iUn.-cSomource Diode Characteristics
VDD = 15 V, ID = 28 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 28 A
20
8
43
5
78
35
16.4
6.6
36
17
70
10
109
49
ns
ns
ns
ns
nC
nC
nC
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 28 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 28 A, di/dt = 300 A/µs
0.38
0.74
46
73
0.9
1.3
75
117
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 162 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 18 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 28 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7658AS Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
150
VGS = 10 V
120 VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
90
VGS = 3 V
60
30
0
0.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.0
5
PULSE DURATION = 80 µs
4
VGS = 3 V
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
2
VGS = 4 V
1
VGS = 4.5 V
VGS = 10 V
0
0 30 60 90 120
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
150
1.6
ID = 28 A
1.4 VGS = 10 V
1.2
1.0
0.8
0.6
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
www.DataSheet4U.com
150
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
120
VDS = 5 V
90
TJ = 125 oC
60
TJ = 25 oC
30
TJ = -55 oC
0
1.0 1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
8
ID = 28 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
6
4
TJ = 125 oC
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
300
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
FDMS7658AS Rev.C
3 www.fairchildsemi.com
Скачать PDF:
[ FDMS7658AS.PDF Даташит ]
| Номер в каталоге | Описание | Производители |
| FDMS7658AS | N-Channel MOSFET | Fairchild Semiconductor |
| Номер в каталоге | Описание | Производители |
| TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
 Unisonic Technologies |
| IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
 Vishay |
| LM317 | Линейный стабилизатор напряжения, 1,5 А |
 STMicroelectronics |
|
DataSheet26.com | 2020 | Контакты | Поиск |