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FDMS7656AS PDF даташит
| Спецификация FDMS7656AS изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDMS7656AS |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
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FDMS7656AS
N-Channel PowerTrench® SyncFET™
30 V, 49 A, 1.8 mΩ
September 2009
Features
General Description
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 1.9 mΩ at VGS = 7 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
The FDMS7656AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
D
D
DD
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
dv/dt
MOSFET dv/dt
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
194
31
180
1.3
242
96
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS7656AS
Device
FDMS7656AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7656AS Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
19 mV/°C
500 µA
100 nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.6 3.0
V
ID = 10 mA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 30 A
VGS = 7 V, ID = 27 A
VGS = 4.5 V, ID = 25 A
VGS = 10 V, ID = 30 A, TJ = 125 °C
VDS = 5 V, ID = 30 A
1.3 1.8
1.5 1.9
mΩ
1.6 2.0
1.8 2.5
161 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
6545
2465
210
0.5
8705
3280
315
1.1
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
www.DataShQeegdt4U.com
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VDD = 15 V, ID = 30 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 30 A
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 30 A
(Note 2)
(Note 2)
IF = 30 A, di/dt = 300 A/µs
22
12
50
7
95
43
18.2
9.1
35
21
80
13
133
60
ns
ns
ns
ns
nC
nC
nC
nC
0.37
0.74
50
84
0.7
1.2
81
136
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 242 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 22 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 34 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7656AS Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
180
150 VGS = 10 V
VGS = 4.5 V
120 VGS = 4 V
VGS = 3.5 V
VGS = 3 V
90
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
30
0
0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
5
VGS = 3 V
4
3
VGS = 3.5 V
2 VGS = 4 V
1
VGS = 4.5 V
VGS = 10 V
0
0 30 60 90 120 150 180
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
ID = 30 A
1.4 VGS = 10 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
www.DataSheet4U.coFmigure 3. Normalized On Resistance
vs Junction Temperature
6
ID = 30 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
TJ = 125 oC
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
180
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150
VDS = 5 V
120
TJ = 125 oC
90
60
30
TJ = 25 oC
TJ = -55 oC
0
123
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics
200
100 VGS = 0 V
10
TJ = 125 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS7656AS Rev.C
3 www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDMS7656AS | N-Channel MOSFET | Fairchild Semiconductor |
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