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FDMS7650 PDF даташит
| Спецификация FDMS7650 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel PowerTrench MOSFET». |
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Детали детали
| Номер произв | FDMS7650 |
| Описание | N-Channel PowerTrench MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
No Preview Available ! |
February 2016
FDMS7650
N-Channel PowerTrench® MOSFET
30 V, 267 A, 0.99 mΩ
Features
General Description
Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low rDS(on).
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant
Applications
OringFET
Synchronous Rectifier
D
D
D
D
D5
4G
G
S
S
S
Pin 1
Top Bottom
Power 56
D6
D7
D8
3S
2S
1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 5)
(Note 5)
(Note 1a)
(Note 6)
(Note 3)
(Note 1a)
Ratings
30
±20
267
169
36
1210
544
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS7650
Device
FDMS7650
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.1.9
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
15 mV/°C
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 36 A
VGS = 4.5 V, ID = 32 A
VGS = 10 V, ID = 36 A, TJ = 125 °C
VDS = 5 V, ID = 36 A
1
1.9 3
V
-6 mV/°C
0.8 0.99
1.1 1.55 mΩ
1.1 1.7
267 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
11250
3050
240
1.4
14965
4055
360
3
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 36 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 36 A
28 45
24 38
83 133
21 34
149 209
63 88
34
13
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 36 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 36 A, di/dt = 100 A/μs
0.7 1.2
0.8 1.3
V
69 97 ns
56 90 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 33 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
6. Pulsed Id please refer to Fig 11 SOA graph for more details.
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.1.9
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted.
200
160
120
80
40
0
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
7
6
VGS = 3 V
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
3
2 VGS = 4 V
1
VGS = 4.5 V
VGS = 10 V
0
0 40 80 120 160 200
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
ID = 36 A
VGS = 10 V
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
ID = 36A
6
4
TJ = 125 oC
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
10
200
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
160
VDS = 3 V
120
TJ = 150 oC
80
TJ = 25 oC
40
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
200
100 VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
0.1
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.1.9
3
www.fairchildsemi.com
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