FDMF6704V PDF даташит

Спецификация FDMF6704V изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «High Frequency DrMOS Module».

Детали детали

Номер произв	FDMF6704V
Описание	High Frequency DrMOS Module
Производители	Fairchild Semiconductor
логотип

13 Pages

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August 2009

FDMF6704V - XSTM DrMOS

The Xtra Small, High Performance, High Frequency DrMOS Module with LDO tm

Benefits

General Description

Single 12 V power supply operation.

Ultra compact size - 6 mm x 6 mm MLP, 44 % space

saving compared to conventional MLP 8 mm x 8 mm

DrMOS packages.

Ultra compact thermally enhanced 6 mm x 6 mm MLP

package 84 % smaller than conventional discrete solutions.

Fully optimized system efficiency.

Clean voltage waveforms with reduced ringing.

High frequency operation.

Compatible with a wide variety of PWM controllers in the

market.

Single input voltage operation.

Features

Internal 12 V to 5 V regulator.

Synchronous driver plus FET multichip module.

High current handling of 35 A.

Over 93 % peak efficiency.

Tri-State PWM input.

Fairchild's PowerTrench® 5 technology MOSFETs for clean

voltage waveforms and reduced ringing.

Optimized for high switching frequencies of up to 1 MHz.

Skip mode SMOD [low side gate turn off] input.

Fairchild SyncFETTM [integrated Schottky diode] technology

in the low side MOSFET.

Integrated bootstrap Schottky diode.

Adaptive gate drive timing for shoot-through protection.

Driver output disable function [DISB# pin].

Undervoltage lockout (UVLO).

Fairchild Green Packaging and RoHS

compliant. Low profile SMD package.

www.DataSheet4U.com

Power Train Application Circuit

CVCIN

CVDRV

The XSTM DrMOS family is Fairchild’s next-generation fully-

optimized, ultra-compact, integrated MOSFET plus driver power

stage solutions for high current, high frequency synchronous

buck DC-DC applications. The FDMF6704V XSTM DrMOS

integrates a driver IC, two power MOSFETs and a bootstrap

Schottky diode along with an integrated 5 V gate drive LDO

regulator into a thermally enhanced, ultra compact 6 mm x 6

mm MLP package. With an integrated approach, the complete

switching power stage is optimized with regards to driver and

MOSFET dynamic performance, system inductance and

RDS(ON). This greatly reduces the package parasitics and layout

challenges associated with conventional discrete solutions.

XSTM DrMOS uses Fairchild's high performance

PowerTrenchTM 5 MOSFET technology, which dramatically

reduces ringing in synchronous buck converter applications.

PowerTrenchTM 5 can eliminate the need for a snubber circuit in

buck converter applications. The driver IC incorporates

advanced features such as SMOD for improved light load

efficiency and a Tri-State PWM input for compatibility with a

wide range of PWM controllers. A 5 V gate drive and an

improved PCB interface, optimized for a maximum low side FET

exposed pad area, ensure higher performance. This product is

compatible with the new Intel 6 mm x 6 mm DrMOS

specification.

Applications

Compact blade servers V-core, non V-core and VTT DC-DC

converters.

Desktop computers V-core, non V-core and VTT DC-DC

converters.

Workstations V-core, non V-core and VTT DC-DC

converters.

Gaming Motherboards V-core, non V-core and VTT DC-DC

converters.

Gaming consoles.

High-current DC-DC Point of Load (POL) converters.

Networking and telecom microprocessor voltage regulators.

VDRV

VIN

CVIN

DISB#

PWM Input

OFF

VCIN VDRV VIN

DISB#

BOOT

PWM

SMOD#

PHASE

VSWH

CGND PGND

RBOOT

CBOOT

LOUT

OUTPUT

COUT

Ordering Information

Order Number

FDMF6704V

Marking

FDMF6704V_1

Figure 1. Power Train Application Circuit

Temperature Range

-55 °C to 150 °C

Device Package

40 Pin, 3 DAP, MLP 6x6 mm

Packing Method

Tape and Reel

Quantity

3000

FDMF6704V Rev.C

www.fairchildsemi.com

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Functional Block Diagram

VDRV

R5eVg

VCIN

BOOT GH

VIN

DISB#

PWM

SMOD#

Pin Configuration

Overlap

Control

VCIN

VSWH

CGND GL

Figure 2. Functional Block Diagram

PGND

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PWM

DISB#

CGND

VSWH

CGND

VIN

VSWH

11 VIN

12 VIN

13 VIN

14 VIN

15 VSWH

16 PGND

17 PGND

18 PGND

19 PGND

20 PGND

VIN

VSWH

PGND

VIN CGND

42 41

VSWH

40 PWM

39 DISB#

38 NC

37 CGND

36 GL

35 VSWH

34 VSWH

33 VSWH

32 VSWH

31 VSWH

FDMF6704V Rev. C

Bottom View

Figure 3. 6mm x 6mm, 40L MLP

Top View

2 www.fairchildsemi.com

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Pin Description

Pin Name

1 SMOD#

5, 37, 41

8, 38

9-14, 42

15, 29-35, 43

16-28

VCIN

VDRV

BOOT

CGND

PHASE

VIN

VSWH

PGND

DISB#

40 PWM

Function

When SMOD# = HI, low side driver is inverse of PWM input. When SMOD# = Low, low

side driver is disabled. This pin has no internal pullup or pulldown. It should not be left

floating. Do not add noise filter cap.

Regulator 5 V Output. Power for gate drives and logic. A minimum 4.7 F X7R ceramic

capacitor is required to be connected from this pin to CGND.

Regulator Input Voltage. A minimum 4.7 F X7R ceramic capacitor is required to be

connected from this pin to CGND.

Bootstrap Supply Input. Provides voltage supply to high-side MOSFET driver. Connect

bootstrap capacitor from this pin to PHASE.

IC Ground. Ground return for driver IC.

For manufacturing test only. This pin must be floated. Must not be connected to any pin.

Switch node pin for easy bootstrap capacitor routing. Electrically shorted to VSWH pin.

Not Connected Internally.

Power input. Output stage supply voltage.

Switch Node Output. Provides return for high-side bootstrapped driver and acts as a

sense point for the adaptive shoot-thru protection.

Power Ground. Output stage ground. Source pin of low side MOSFET(s).

For manufacturing test only. This pin must be floated. Must not be connected to any pin.

Output disable. When low, this pin disable FET switching (GH and GL are held low). This

pin has no internal pullup or pulldown. It should not be left floating. Do not add noise filter

cap.

PWM Signal Input. This pin accepts a Tri-state logic-level PWM signal from the controller.

Do not add noise filter cap.

Absolute Maximum Rating

Parameter

VCIN, DISB#, PWM, SMOD#, GL to CGND

VIN to PGND, CGND

VDRV to PGND, CGND

www.DataShBeeOt4OUT.,cGoHm to VSWH, PHASE

BOOT, VSWH, PHASE, GH to GND

BOOT to VCIN

IO(AV)*

VIN = 12 V, VO = 1.3 V

fSW = 350 kHz

fSW = 1 MHz

IO(peak)*

RθJB

Thermal Resistance Junction to Board

Operating and Storage Junction Temperature Range

Min

-55

Max

3.75

150

Units

°C/W

°C

* IO(AV) and IO(peak) are measured in FCS evaluation board. These ratings can be changed with different application setting.

Recommended Operating Range

Parameter

VDRV

Vgate and Logic Supply Voltage

VIN Output FET Supply Voltage

* May be operated at lower input voltage. See figure 10.

Min Typ Max Units

8 12 14 V

3* 12 14 V

3 www.fairchildsemi.com

FDMF6704V Rev. C

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Номер в каталоге	Описание	Производители
FDMF6704	High Frequency DrMOS Module	Fairchild Semiconductor
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FDMF6704V	High Frequency DrMOS Module	Fairchild Semiconductor

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