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FDMC8296 PDF даташит
| Спецификация FDMC8296 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDMC8296 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
No Preview Available ! |
March 2008
FDMC8296
N-Channel Power Trench® MOSFET
30V, 18A, 8.0mΩ
tm
Features
General Description
Max rDS(on) = 8.0mΩ at VGS = 10V, ID = 12A
Max rDS(on) = 13.0mΩ at VGS = 4.5V, ID = 10A
High performance trench technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is welll suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Pin 1
D
D
D
D
S
S
S
G
D5
D6
D7
D8
4G
3S
2S
1S
TOP
Power 33
Bottom
www.DataShMeeOt4US.cFoEm T Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
44
12
52
60
27
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.6
53
°C/W
Device Marking
FDMC8296
Device
FDMC8296
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMC8296 Rev.B
1
www.fairchildsemi.com
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to 25°C
VDS = 24V,
VGS = 0V,
TJ = 125°C
VGS = ±20V, VDS = 0V
30 V
17 mV/°C
1
250
±100
µA
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 12A,
VDD = 5V, ID = 12A
TJ = 125°C
1.0
1.9 3.0
V
-6 mV/°C
6.5 8.0
9.5 13.0 mΩ
9.0 12.8
44 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
1038
513
87
0.9
1385
685
135
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg(TOT)
Total Gate Charge
Qgs Total Gate Charge
Qgd Gate to Drain “Miller” Charge
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Drain-Source Diode Characteristics
VDD = 15V, ID = 12A,
VGS = 10V, RGEN = 6Ω
VGS = 0V to 10V
VGS = 0V to 4.5V
VDD = 15V,
ID = 12A
9 18 ns
3 10 ns
19 35 ns
2 10 ns
16 23 nC
7.6 10.6 nC
3 nC
2.5 nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 12A
VGS = 0V, IS = 1.9A
(Note 2)
(Note 2)
0.82 1.3
0.73 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 12A, di/dt = 100A/µs
25 45 ns
9 18 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25oC; N-ch: L = 1 mH, IAS = 11A, VDD = 27V, VGS = 10V.
FDMC8296 Rev.B
2
www.fairchildsemi.com
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Typical Characteristics TJ = 25°C unless otherwise noted
50
VGS = 10V
40 VGS = 4.5V
30 VGS = 4V
VGS = 3.5V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
VGS = 3V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
6
PULSE DURATION = 80µs
5 DUTY CYCLE = 0.5%MAX
VGS = 3V
4
3 VGS = 3.5V
VGS = 4V VGS = 4.5V
2
1
VGS = 10V
0
0 10 20 30 40 50
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = 12A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
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50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = 5V
30
20
TJ = 150oC
TJ = 25oC
10
TJ = -55oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
ID = 12A
30
20
TJ = 125oC
10
0
2
TJ = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
50
10 VGS = 0V
TJ = 150oC
1
0.1
0.01
TJ = 25oC
TJ = -55oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
FDMC8296 Rev.B
3 www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDMC8296 | N-Channel MOSFET | Fairchild Semiconductor |
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