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FDMC8200 PDF даташит
| Спецификация FDMC8200 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDMC8200 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
11 Pages
No Preview Available ! |
FDMC8200
June 2009
Dual N-Channel PowerTrench® MOSFET
30 V, 9.5 mΩ and 20 mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A
Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7 A
RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual Power33 (3mm x 3mm MLP) package. The switch node
has been internally connected to enable easy placement and
routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous MOSFET (Q2) have been
designed to provide optimal power efficiency.
Applications
Mobile Computing
Mobile Internet Devices
General Purpose Point of Load
Pin 1
D1
D1
D1
G1
D1
D2/S1
S2
S2
S2
G2
VIN
VIN VIN
GHS
VIN
SWITCH
NODE
GND GND GND
GLS
S2 5
S2 6
S2 7
G2 8
Q2
Q1
BOTTOM
BOTTOM
Power 33
www.DataSheet4U.com
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
- Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±20
18 18
23 45
8 1a 12 1b
40
1.9 1a
0.7 1c
40
2.2 1b
0.9 1d
-55 to +150
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
65 1a
180 1c
7.5
55 1b
145 1d
4
4 D1
3 D1
2 D1
1 G1
Units
V
V
A
W
°C
°C/W
Device Marking
FDMC8200
Device
FDMC8200
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VDS = 20 V, VGS = 0 V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 µA
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 5 A
VGS = 10 V, ID = 6 A, TJ = 125 °C
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 7 A
VGS = 10 V, ID = 9 A, TJ = 125 °C
VDD = 5 V, ID = 6 A
VDD = 5 V, ID = 9 A
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Crss Reverse Transfer Capacitance
Rg Gate Resistance
www.DataShSewet4itUc.hcoinmg Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
Q2
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V Q1:
VDD = 15 V,
VGS = 0 V to 4.5 V ID = 6 A,
Q2:
VDD = 15 V,
ID = 9 A,
Type Min Typ Max Units
Q1 30
Q2 30
V
Q1
Q2
14
14
mV/°C
Q1
Q2
1
1
µA
Q1 100 nA
Q2 100 nA
Q1 1.0 2.3 3.0
Q2 1.0 2.3 3.0
V
Q1
Q2
-5
-6
mV/°C
16 20
Q1 24 32
22 28
mΩ
7.3 9.5
Q2 9.5 13.5
10 13
Q1 29
Q2 56
S
Q1
Q2
495 660
1180 1570
pF
Q1
Q2
145 195
330 440
pF
Q1
Q2
20
30
30
45
pF
Q1 1.4
Q2 1.4
Ω
Q1
Q2
11
13
20
23
ns
Q1
Q2
3.1
4
10
10
ns
Q1
Q2
35
38
56
60
ns
Q1
Q2
1.3
6
10
12
ns
Q1
Q2
7.3
16
10
22
nC
Q1
Q2
3.1
7
4.3
10
nC
Q1
Q2
1.8
4.1
nC
Q1
Q2
1
1.5
nC
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
2
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Volt-
age
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 6 A
VGS = 0 V, IS = 9 A
Q1
IF = 6 A, di/dt = 100 A/s
Q2
IF = 9 A, di/dt = 100 A/s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
V
13
21
24
34
ns
2.3
5.6
10
12
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a.65 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 180 °C/W when mounted on a
minimum pad of 2 oz copper
d. 145 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
www.DataSh3.eAesta4nUN.-ccohmdevice, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
3
www.fairchildsemi.com
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