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FDMC7680 PDF даташит
| Спецификация FDMC7680 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FDMC7680 |
| Описание | N-Channel MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
7 Pages
No Preview Available ! |
July 2009
FDMC7680
N-Channel Power Trench® MOSFET
30 V, 14.8 A, 7.2 m:
Features
General Description
Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A
Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
www.DataSheet4U.com
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
14.8
45
72
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
53
°C/W
Device Marking
FDMC7680
Device
FDMC7680
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7680 Rev.B
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
30
V
ID = 250 PA, referenced to 25 °C
15 mV/°C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = 20 V, VDS = 0 V
1
PA
250
100 nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 14.8 A
VGS = 4.5 V, ID = 12.4 A
VGS = 10 V, ID = 14.8 A
TJ = 125 °C
VDD = 5 V, ID = 14.8 A
1.2 2.0 3.0
V
-6 mV/°C
5.8 7.2
7.3 9.5 m:
7.4 9.2
68 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2145
770
75
0.5
2855
1020
115
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Total Gate Charge
www.DataShQeegdt4U.com Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
VDD = 15 V, ID = 14.8 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 14.8 A
12 22 ns
4 10 ns
25 40 ns
3 10 ns
30 42 nC
14 19 nC
7 nC
4 nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 14.8 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14.8 A, di/dt = 100 A/Ps
0.84 1.2
0.73 1.2
34 54
15 24
V
ns
nC
NOTES:
1. R TJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. EAS of 72 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 12 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 5.7 A.
©2009 Fairchild Semiconductor Corporation
FDMC7680 Rev.B
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
45
VGS = 10 V PULSE DURATION = 80 Ps
36 VGS = 6 V DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
27
VGS = 4 V
VGS = 3.5 V
18
9
VGS = 3 V
0
0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
3.5
VGS = 3.5 V
3.0
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
2.5
VGS = 4.5 V
2.0 VGS = 4 V
1.5
1.0
0.5
0
VGS = 6 V
VGS = 10 V
9 18 27 36
ID, DRAIN CURRENT (A)
45
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 14.8 A
VGS = 10 V
1.4
25
ID = 14.8 A
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
20
1.2 15
TJ = 125 oC
1.0 10
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
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45
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
36
VDS = 5 V
27
18
9
0
1
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
VGS = 0 V
10
10
1 TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2009 Fairchild Semiconductor Corporation
FDMC7680 Rev.B
3
www.fairchildsemi.com
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| Номер в каталоге | Описание | Производители |
| FDMC7680 | N-Channel MOSFET | Fairchild Semiconductor |
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