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FDMC7672 PDF даташит
| Спецификация FDMC7672 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel Power Trench MOSFET». |
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Детали детали
| Номер произв | FDMC7672 |
| Описание | N-Channel Power Trench MOSFET |
| Производители | Fairchild Semiconductor |
| логотип |  |
8 Pages
No Preview Available ! |
June 2014
FDMC7672
N-Channel Power Trench® MOSFET
30 V, 16.9 A, 5.7 mΩ
Features
General Description
Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A
Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top Bottom
Pin 1
SS S
G
MLP 3.3x3.3
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
20
16.9
50
144
33
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.7
53
°C/W
Device Marking
FDMC7672
Device
FDMC7672
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
30
V
ID = 250 μA, referenced to 25 °C
13 mV/°C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = 20 V, VDS = 0 V
1
μA
250
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 16.9 A
VGS = 4.5 V, ID = 15.0 A
VGS = 10 V, ID = 16.9 A
TJ = 125 °C
VDD = 5 V, ID = 16.9 A
1.2 1.9 3.0
V
-6 mV/°C
4.3 5.7
5.4 7.0 mΩ
5.5 6.9
82 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2925
1050
80
0.9
3890
1400
120
2.7
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 16.9 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 16.9 A
13 24 ns
6 12 ns
31 49 ns
5 10 ns
40 57 nC
18 24 nC
9 nC
4 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 16.9 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 16.9 A, di/dt = 100 A/μs
0.83 1.2
0.72 1.2
39 62
18 32
V
ns
nC
NOTES:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25 °C unless otherwise noted
50
VGS = 10 V
40 VGS = 6 V
VGS = 4.5 V
30 VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
VGS = 3.5 V
10
VGS = 3 V
0
0.0 0.5 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.5
4.5
4.0
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3.5
3.0
VGS = 4 V
2.5
2.0
VGS = 4.5 V
1.5
1.0
0.5
0
VGS = 6 V
VGS = 10 V
10 20 30 40
ID, DRAIN CURRENT (A)
50
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
ID = 16.9 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs. Junction Temperature
20
PULSE DURATION = 80 μs
ID = 16.9 A DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
10
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VDS = 5 V
30
20
10
0
1
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
23
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
1 TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
1.2
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
3
www.fairchildsemi.com
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