FDMC7664 PDF даташит

Спецификация FDMC7664 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDMC7664
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

7 Pages

No Preview Available !

FDMC7664

N-Channel PowerTrench® MOSFET

30 V, 18.8 A, 4.2 m:

July 2009

Features

General Description

Max rDS(on) = 4.2 m: at VGS = 10 V, ID = 18.8 A

Max rDS(on) = 5.5 m: at VGS = 4.5 V, ID = 16.1 A

High performance technology for extremely low rDS(on)

Termination is Lead-free and RoHS Compliant

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench® process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Applications

DC - DC Buck Converters

Notebook battery power management

Load switch in Notebook

Top Bottom

Pin 1

S SG

MLP 3.3x3.3

www.DataSMheOet4SUF.coEmT Maximum Ratings TA = 25 °C unless otherwise noted

Symbol

VDS

VGS

EAS

TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (Package limited)

-Continuous

-Pulsed

TC = 25 °C

TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

(Note 1a)

(Note 3)

(Note 1a)

Ratings

±20

18.8

188

2.3

-55 to +150

Units

°C

RTJA

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

(Note 1a)

°C/W

Device Marking

FDMC7664

Device

FDMC7664

Package

MLP 3.3x3.3

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMC7664 Rev.B

www.fairchildsemi.com

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Off Characteristics

BVDSS

'BVDSS

'TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current, Forward

ID = 250 PA, VGS = 0 V

ID = 250 PA, referenced to 25 °C

VDS = 24 V, VGS = 0 V

TJ = 125 °C

VGS = 20 V, VDS = 0 V

On Characteristics

VGS(th)

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS Forward Transconductance

VGS = VDS, ID = 250 PA

ID = 250 PA, referenced to 25 °C

VGS = 10 V, ID = 18.8 A

VGS = 4.5 V, ID = 16.1 A

VGS = 10 V, ID = 18.8 A

TJ = 125 °C

VDD = 5 V, ID = 18.8 A

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = 15 V, VGS = 0 V

f = 1 MHz

Switching Characteristics

td(on)

td(off)

Qg(TOT)

Qgs

www.DataShQeegdt4U.com

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = 15 V, ID = 18.8 A

VGS = 10 V, RGEN = 6 :

VGS = 0 V to 10 V

VGS = 0 V to 4.5 V VDD = 15 V

ID = 18.8 A

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0 V, IS = 18.8 A

VGS = 0 V, IS = 1.9 A

(Note 2)

IF = 18.8 A, di/dt = 100 A/Ps

Min

1.0

Typ

1.9

-7

3.6

4.5

4.4

115

3655

1100

115

0.8

0.83

0.71

Max Units

mV/°C

250

100 nA

3.0 V

mV/°C

4.2

5.5 m:

5.4

4865

1465

170

27 ns

14 ns

59 ns

12 ns

76 nC

34 nC

1.2

65 ns

35 nC

NOTES:

1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by

the user's board design.

a. 53 °C/W when mounted on

a 1 in2 pad of 2 oz copper

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

3. EAS of 188 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 19.4 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 8.3 A.

FDMC7664 Rev.B

www.fairchildsemi.com

No Preview Available !

Typical Characteristics TJ = 25 °C unless otherwise noted

VGS = 10 V

VGS = 6 V

45 VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

0.0

VGS = 3 V

PULSE DURATION = 80 Ps

DUTY CYCLE = 0.5% MAX

0.3 0.6 0.9

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.2

Figure 1. On Region Characteristics

VGS = 3 V

PULSE DURATION = 80 Ps

DUTY CYCLE = 0.5% MAX

VGS = 4.5 V VGS = 3.5 V

VGS = 4 V

VGS = 6 V

VGS = 10 V

0 15 30 45 60

ID, DRAIN CURRENT (A)

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6

ID = 18.8 A

VGS = 10 V

1.4

1.2

1.0

0.8

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

www.DataSheet4U.coFmigure 3. Normalized On Resistance

vs Junction Temperature

PULSE DURATION = 80 Ps

DUTY CYCLE = 0.5% MAX

ID = 18.8 A

6 TJ = 125 oC

TJ = 25 oC

2468

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80 Ps

DUTY CYCLE = 0.5% MAX

VDS = 5 V

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

1234

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

100

VGS = 0 V

TJ = 150 oC

0.1

0.01

TJ = 25 oC

TJ = -55 oC

0.001

0.0

0.2 0.4 0.6 0.8 1.0

VSD, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC7664 Rev.B

www.fairchildsemi.com

Скачать PDF:

[ FDMC7664.PDF Даташит ]

Номер в каталоге	Описание	Производители
FDMC7660	N-Channel PowerTrench MOSFET	Fairchild Semiconductor
FDMC7660DC	N-Channel Dual Cool 33 PowerTrenc MOSFET	Fairchild Semiconductor
FDMC7660S	N-Channel Power Trench SyncFET	Fairchild Semiconductor
FDMC7664	N-Channel MOSFET	Fairchild Semiconductor

Номер в каталоге	Описание	Производители
TL431	100 мА, регулируемый прецизионный шунтирующий регулятор	Unisonic Technologies
IRF840	8 А, 500 В, N-канальный МОП-транзистор	Vishay
LM317	Линейный стабилизатор напряжения, 1,5 А	STMicroelectronics

DataSheet26.com | 2020 |

Контакты | Поиск