FDMC6679AZ PDF даташит

Спецификация FDMC6679AZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDMC6679AZ
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

7 Pages

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FDMC6679AZ

P-Channel PowerTrench® MOSFET

-30 V, -20 A, 10 mΩ

Features

Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A

Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A

HBM ESD protection level of 8 kV typical(note 3)

Extended VGSS range (-25 V) for battery applications

High performance trench technology for extremely low rDS(on)

High power and current handling capability

Termination is Lead-free and RoHS Compliant

July 2009

General Description

The FDMC6679AZ has been designed to minimize losses in

load switch applications. Advancements in both silicon and

package technologies have been combined to offer the lowest

rDS(on) and ESD protection.

Applications

Load Switch in Notebook and Server

Notebook Battery Pack Power Management

Top Bottom

Pin 1

S SG

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

www.DataSheetS4Uym.cbomol

VDS

VGS

TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

-Pulsed

TC = 25 °C

TA = 25 °C

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

(Note 1a)

Ratings

-30

±25

-20

-51

-11.5

-32

2.3

-55 to +150

Units

°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

(Note 1a)

°C/W

Device Marking

FDMC6679AZ

Device

FDMC6679AZ

Package

MLP 3.3x3.3

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMC6679AZ Rev.D1

www.fairchildsemi.com

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

∆BVDSS

∆TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = -250 µA, VGS = 0 V

ID = -250 µA, referenced to 25 °C

VDS = -24 V,

VGS = 0 V,

TJ = 125 °C

VGS = ±25 V, VDS = 0 V

-30 V

29 mV/°C

-1

-100

±10

µA

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = -250 µA

-1 -1.8 -3

∆VGS(th)

∆TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = -250 µA, referenced to 25 °C

-7 mV/°C

VGS = -10 V, ID = -11.5 A

8.6 10

rDS(on)

Static Drain to Source On Resistance VGS = -4.5 V, ID = -8.5 A

12 18 mΩ

VGS = -10 V, ID = -11.5 A, TJ = 125 °C

12 15

gFS Forward Transconductance

VDS = -5 V, ID = -11.5 A

46 S

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = -15 V, VGS = 0 V,

f = 1 MHz

2985

570

500

4.3

3970

755

750

Ω

Switching Characteristics

td(on)

td(off)

Qgs

www.DataShQeegdt4U.com

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = -15 V, ID = -11.5 A,

VGS = -10 V, RGEN = 6 Ω

VGS = 0 V to -10 V

VGS = 0 V to -5 V

VDD = -15 V,

ID = -11.5 A

12 21 ns

14 25 ns

63 100 ns

46 73 ns

65 91 nC

37 52 nC

8.7 nC

17 nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage VGS = 0 V, IS = -11.5 A

VGS = 0 V, IS = -1.6 A

(Note 2)

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = -11.5 A, di/dt = 100 A/µs

0.83

0.71

1.30

1.20

NOTES:

1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

a. 53 °C/W when mounted on

a 1 in2 pad of 2 oz copper

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.

3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

FDMC6679AZ Rev.D1

www.fairchildsemi.com

No Preview Available !

Typical Characteristics TJ = 25 °C unless otherwise noted

VGS = -10 V

VGS = -6 V

VGS = -4.5 V

VGS = -4 V

VGS = -3.5 V

VGS = -3 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

VGS = -3 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

VGS = -3.5 V

VGS = -4 V

VGS = -4.5 V

VGS = -6 V

VGS = -10 V

0 8 16 24 32

-ID, DRAIN CURRENT (A)

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6

ID = -11.5 A

VGS = -10 V

1.4

1.2

1.0

0.8

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

www.DataSheet4U.coFmigure 3. Normalized On Resistance

vs Junction Temperature

ID = -11.5 A

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

TJ = 125 oC

TJ = 25 oC

468

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

24 VDS = -5 V

TJ = 25 oC

TJ = 150 oC

TJ = -55 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

10 VGS = 0 V

1 TJ = 150 oC

0.1

TJ = 25 oC

0.01

TJ = -55 oC

0.001

0.0

0.2 0.4 0.6 0.8 1.0

-VSD, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC6679AZ Rev.D1

www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDMC6679AZ	N-Channel MOSFET	Fairchild Semiconductor

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