FDMC6675BZ PDF даташит

Спецификация FDMC6675BZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв	FDMC6675BZ
Описание	N-Channel MOSFET
Производители	Fairchild Semiconductor
логотип

7 Pages

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FDMC6675BZ

P-Channel Power Trench® MOSFET

-30 V, -20 A, 14.4 mΩ

June 2009

Features

General Description

Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A

Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A

HBM ESD protection level of 8 kV typical(note 3)

Extended VGSS range (-25 V) for battery applications

High performance trench technology for extremely low rDS(on)

High power and current handling capability

Termination is Lead-free and RoHS Compliant

The FDMC6675BZ has been designed to minimize losses in

load switch applications. Advancements in both silicon and

package technologies have been combined to offer the lowest

rDS(on) and ESD protection.

Application

Load Switch in Notebook and Server

Notebook Battery Pack Power Management

Top Bottom

Pin 1

S SG

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

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Symbol

Parameter

VDS Drain to Source Voltage

VGS Gate to Source Voltage

Drain Current -Continuous (Package limited) TC = 25 °C

-Continuous (Silicon limited)

-Continuous

TC = 25 °C

TA = 25 °C

-Pulsed

TJ, TSTG

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

(Note 1a)

Ratings

-30

±25

-20

-40

-9.5

-32

2.3

-55 to +150

Units

°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

(Note 1a)

3.4

°C/W

Device Marking

FDMC6675BZ

Device

FDMC6675BZ

Package

MLP 3.3X3.3

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMC6675BZ Rev.D1

www.fairchildsemi.com

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Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = -250 µA, VGS = 0 V

-30

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = -250 µA, referenced to 25 °C

20 mV/°C

IDSS Zero Gate Voltage Drain Current

VDS = -24 V,

VGS = 0 V

TJ = 125 °C

-1

-100

µA

IGSS

Gate to Source Leakage Current

VGS = ±25 V, VDS = 0 V

±10 µA

On Characteristics

VGS(th)

∆VGS(th)

∆TJ

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS Forward Transconductance

VGS = VDS, ID = -250 µA

ID = -250 µA, referenced to 25 °C

VGS = -10 V, ID = -9.5 A

VGS = -4.5 V, ID = -6.9 A

VGS = -10 V, ID = -9.5 A, TJ = 125 °C

VDD = -5 V, ID = -9.5 A

-1.0

-1.9

-6

10.7

17.4

15.2

-3.0

14.4

27.0

20.5

mV/°C

mΩ

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = -15 V, VGS = 0 V,

f = 1 MHz

2154

392

349

2865

525

Switching Characteristics

td(on)

td(off)

Qg(TOT)

Qgs

Qgd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = -15 V, ID = -9.5 A,

VGS = -10 V, RGEN = 6 Ω

VGS = 0 V to -10 V

VGS = 0 V to -5 V VDD = -15 V,

ID = -9.5 A

11 20 ns

10 20 ns

44 71 ns

26 42 ns

46 65 nC

26 37 nC

6.4 nC

13 nC

www.DataShDereat4iUn.-cSomource Diode Characteristics

VSD

Source to Drain Diode Forward Voltage VGS = 0 V, IS = -9.5 A

VGS = 0 V, IS = -1.6 A

(Note 2)

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = -9.5 A, di/dt = 100 A/µs

0.89 1.3

0.73 1.2

24 38

15 27

NOTES:

1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

a. 53 °C/W when mounted on

a 1 in2 pad of 2 oz copper

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.

3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

FDMC6675BZ Rev.D1

www.fairchildsemi.com

No Preview Available !

Typical Characteristics TJ = 25 °C unless otherwise noted

VGS = -4 V

VGS = -4.5 V

24 VGS = -6 V

VGS = -10 V

VGS = -3.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

VGS = -3.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5%MAX

VGS = -4 V

VGS = -4.5 V

VGS = -6 V

8 16

-ID, DRAIN CURRENT (A)

VGS = -10 V

24 32

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6

ID = -9.5 A

VGS = -10 V

1.4

1.2

1.0

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

ID = -9.5 A

TJ = 125 oC

0.8

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. Normalized On Resistance

vs Junction Temperature

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PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

VDS = -5 V

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

01234

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

468

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

100

VGS = 0 V

TJ = 150 oC

TJ = 25 oC

0.1

0.01

0.2

TJ = -55 oC

0.4 0.6 0.8 1.0

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

1.2

FDMC6675BZ Rev.D1

www.fairchildsemi.com

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Номер в каталоге	Описание	Производители
FDMC6675BZ	N-Channel MOSFET	Fairchild Semiconductor

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